Silicon nitride window for microsampling device and method of construction

• US 6,896,850 B2
• Filed: 03/26/2001
• Issued: 05/24/2005
• Est. Priority Date: 03/26/2001
• Status: Expired due to Fees

• Current Assignee: Kumetrix Incorporated
• Original Assignee: Kumetrix Incorporated
• Inventors: Kanu, Asikeh, Subramanian, Kumar, Smart, Wilson
• Primary Examiner(s): Warden, Jill
• Assistant Examiner(s): Handy, Dwayne K
• Application Number:
  US09/816,497
• Publication Number:
  US 20020136667A1
• Time in Patent Office: 1,520 Days
• Field of Search: 422/55, 422/58, 422/61, 422/60.1, 422/99, 422/100, 422/102, 436/164, 436/165, 436/174, 436/179, 435/283.1, 435/287.1, 435/288.1, 435/288.7, 156/625.1, 156/626.1, 156/662.1
• US Class Current: 73/61.71
• CPC Class Codes: B81B 3/0035 Constitution or structural means for controlling the movement of the flexible or deformable elements
• CPC Class Codes: G01N 2021/0346 Capillary cells; Microcells
• CPC Class Codes: G01N 21/03 Cuvette constructions
• CPC Class Codes: Y10T 436/25 including sample preparation
• CPC Class Codes: Y10T 436/25625 Dilution
• CPC Class Codes: Y10T 436/25875 Gaseous sample or with change of physical state

Abstract

A silicon nitride cuvette window for a microsampling device and method of construction are provided. The sample to be analyzed is drawn into the cuvette of the microsampling device. The silicon nitride window permits optical measurements to be made on analytes contained within the cuvette.

Claims

1. Method of constructing a window in a silicon cuvette, comprising the steps of:

providing a silicon substrate having a top surface and a bottom surface;

etching a depression in the top surface of the silicon substrate defining a microsample chamber;

depositing a silicon nitride film on the top surface of the silicon substrate and in the chamber; and

etching a depression in the bottom surface of the silicon substrate in registration with the chamber in the top surface for exposing the silicon nitride film within the chamber to form the window.

2. The method of claim 1 wherein the silicon substrate is a silicon wafer.

3. The method of claim 1 wherein the silicon nitride film has a thickness of from about 0.01 of a micrometer to 5 about micrometers.

9. The method of claim 1 further comprising the step of applying an antireflective coating to the exposed silicon nitride film.

10. The method of claim 9 wherein the applied antireflective coating is magnesium fluoride.

4. Method of constructing a chamber window in a microsample chamber, comprising the steps of:

providing a silicon substrate having a sampling side and a viewing side;

etching a depression in the sampling side of the silicon substrate defining a microsample chamber, a needle bore, and a vent;

depositing a silicon nitride film in at least the microsample chamber; and

etching a depression in the viewing side of the silicon substrate in registration with the microsample chamber in the sampling side for exposing the silicon nitride film within the microsample chamber to form the chamber window.

5. The method of claim 4 wherein the silicon substrate has a thickness of about 500 micrometers.

6. The method of claim 4 wherein the silicon nitride film has a thickness of from about 0.01 of a micrometer to about 5 micrometers.

7. The method of claim 4 further comprising the step of applying an antireflective coating to the exposed silicon nitride film.

8. The method of claim 7 wherein the applied antireflective coating is magnesium fluoride.

11. Method of constructing a window in a silicon cuvette, comprising the steps of:

providing a silicon substrate having a top surface and a bottom surface;

etching a depression in the top surface of the silicon substrate defining a microsample chamber;

depositing a silicon nitride film in at least the chamber; and

etching a depression in the bottom surface of the silicon substrate in registration with the chamber in the top surface for exposing the silicon nitride film within the chamber to form the chamber window.