Method for fabricating metal interconnections

• US 6,897,135 B2
• Filed: 05/03/2002
• Issued: 05/24/2005
• Est. Priority Date: 04/13/1999
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Izumi, Yoshihiro, Chikama, Yoshimasa
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US10/138,755
• Publication Number:
  US 20020127833A1
• Time in Patent Office: 1,117 Days
• Field of Search: 438678-681, 438686-687, 438597-599
• US Class Current: 438/597
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

In the present method for fabricating metal interconnections, a Ni film is deposited on an insulating substrate by electroless plating, and a photoresist film is formed in a specified pattern on the Ni film. An Au film is deposited by electroless plating in a region where the Ni film is exposed and where the resist is not formed. The photoresist film is removed, and the Ni film exposed by the removal of the photoresist film is removed by etching. A Cu film is formed on the Au film by electroplating or electroless plating selectively. This method consists of only wet deposition process, involves less etching process and provides metal interconnections of low resistance.

Claims

1. A method for fabricating metal interconnections, comprising:

a first step for depositing a ground metal film on an insulating substrate by electroless plating;

a second step for forming a resist in a specified pattern on the ground metal film;

a third step for removing, by etching, the ground metal film present in a region where the resist is not formed;

a fourth step for removing the resist;

a fifth step for depositing a noble metal film by electroless plating selectively on the ground metal film exposed by the removal of the resist; and

a sixth step for depositing a metal film by electroplating or electroless plating selectively only on the noble metal film.

2. A method for fabricating metal interconnections according to claim 1, wherein the electroless plating of the noble metal film in the fifth step is substitute plating for substituting the noble metal film for a surface of the ground metal film deposited in the first step.

3. The method for fabricating metal interconnections according to claim 1, further comprising:

a seventh step for forming a surface metal film on the metal film in addition to the first to sixth steps.

4. The method for fabricating metal interconnections according to claim 1, wherein the ground metal film is formed of nickel.

5. The method for fabricating metal interconnections according to claim 1, wherein the metal film is formed of copper.

6. The method for fabricating metal interconnections according to claim 1, wherein the metal film is formed of copper.

7. An active matrix board comprising metal interconnections formed by using the fabrication method according to claim 1.