Silicon-based thin film forming apparatus, silicon-based thin film forming method and semiconductor element

• US 6,897,559 B2
• Filed: 06/06/2003
• Issued: 05/24/2005
• Est. Priority Date: 06/10/2002
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakai, Akira, Matsuda, Koichi, Kondo, Takaharu
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): TRAN, MAI HUONG C
• Application Number:
  US10/455,300
• Publication Number:
  US 20030227082A1
• Time in Patent Office: 718 Days
• Field of Search: 257/461, 257/463, 438/57, 438 58- 98
• US Class Current: 257/728
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0245 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/206 Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of higher quality and excellent uniformity by applying a high frequency power of a first frequency selected from the range between 30 MHz and 500 MHz to a power-applying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 10 mm±5 mm, and by supplying a high frequency power of a second frequency selected from the range between 10 MHz and 30 MHz to a power-supplying electrode in a deposited film forming vessel wherein the distance between the power-supplying electrode and the substrate is 20 mm±5 mm.

Claims

1. An apparatus for forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process, comprising a substrate and a high frequency applying electrode disposed in opposition to each other in each of the deposited film forming vessels, wherein the plurality of deposited film forming vessels including a first deposited film forming vessel having a first high-frequency applying electrode disposed so as to be distant by 10 mm±

5 mm from the substrate and a first means for applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz connected to the first high-frequency applying electrode, and a second deposited film forming vessel having a second high-frequency applying electrode disposed so as to be distant by 20 mm±

5 mm from the substrate and a second means for applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz connected to the second high-frequency applying electrode.

2. The apparatus according to claim 1, which is provided with a roll-to-roll system in which a belt-like substrate is used as the substrate and the belt-like substrate is carried by rollers and transported.

3. A method of forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process in a state such that the substrate and a high frequency applying electrode are disposed in opposition to each other in each of the deposited film forming vessels, the method comprising a first step of forming a deposited film while applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz through a first high-frequency applying electrode disposed so as to be distant by 10 mm±

5 mm from the substrate, and a second step of forming a deposited film while applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz through a second high-frequency applying electrode disposed so as to be distant by 20 mm±

5 mm from the substrate.

4. The method according to claim 3, wherein a substantially intrinsic silicon-based thin film is formed in the first step.

5. The method according to claim 3, wherein a silicon-based thin film of n- or p-type conductivity is formed in the second step.

6. The method according to claim 3, wherein a substantially intrinsic silicon-based thin film is formed in the first step and a silicon-based thin film of n- or p-type conductivity is formed in the second step, thereby forming a pin-type semiconductor element on the substrate.

7. The method according to claim 3, which employs a roll-to-roll system in which a belt-like substrate is used as the substrate and the belt-like substrate is carried by rollers and transported.

8. A semiconductor element comprising a silicon-based thin film formed on a substrate, the silicon-based thin film being formed by a method of forming a silicon-based thin film on a substrate using a plurality of deposited film forming vessels by a high-frequency plasma process in a state such that the substrate and a high frequency applying electrode are disposed in opposition to each other in each of the deposited film forming vessels, comprising a first step of forming a deposited film while applying high-frequency waves of a first frequency selected from the range between 30 MHz and 500 MHz through a first high-frequency applying electrode disposed so as to be distant by 10 mm±

5 mm from the substrate, and a second step of forming a deposited film while applying high-frequency waves of a second frequency less than the first frequency selected from the range between 10 MHz and 30 MHz through a second high-frequency applying electrode disposed so as to be distant by 20 mm±

5 mm from the substrate.

9. The semiconductor element according to claim 8, wherein a substantially intrinsic silicon-based thin film is formed in the first step and a silicon-based thin film of n- or p-type conductivity is formed in the second step.

10. The semiconductor element according to claim 8, wherein the method of forming a silicon-based thin film employs a roll-to-roll system in which a belt-like substrate is used as the substrate and the belt-like substrate is carried by rollers and transported.