Memory cell with fuse element
First Claim
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1. A memory device comprising:
- at least a gate-ox fuse element adapted to selectively set a state of the memory device; and
at least a level shifter adapted to standoff a high voltage required to set said state of the memory device.
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Abstract
The present invention relates to a programmable memory cell and a method of setting a state for a programmable memory cell. The memory cell includes two thin gated fuses adapted to set the state of the memory cell. A level shifter device is connected to the gated fuses and is adapted to stand off a high voltage when setting the state of the memory cell. At least one switch transistor is connected to at least the level shifter device and is adapted to select at least one of the gated fuses, enabling a high voltage to be communicated thereto, thus setting the state of the memory cell.
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Citations
21 Claims
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1. A memory device comprising:
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at least a gate-ox fuse element adapted to selectively set a state of the memory device; and
at least a level shifter adapted to standoff a high voltage required to set said state of the memory device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A programmable memory cell comprising:
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two gated fuses adapted to set a state of the memory cell;
a level shifter connected to said gated fuses and adapted to stand off a high voltage when setting said state of the memory cell; and
at least one switch transistor connected to at least said level, shifter adapted to select at least one of said gated fuses and enable a high voltage to be communicated thereto, setting said state of the memory cell. - View Dependent Claims (13, 14, 15, 16)
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17. A method of programming a memory device comprising:
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selectively setting a state of the memory device using at least a gate-ox fuse element; and
standing off a high voltage required to set said state of the memory device. - View Dependent Claims (18, 19, 20, 21)
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Specification