Dislocation reduction in non-polar gallium nitride thin films
First Claim
1. A method of reducing threading dislocation densities in a non-polar a-plane gallium nitride thin film, comprising:
- (a) depositing a dielectric regrowth mask on the non-polar a-plane gallium nitride thin film;
(b) patterning the deposited mask; and
(c) performing a selective regrowth to achieve an overgrowth based on the patterned mask.
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Abstract
Lateral epitaxial overgrowth of non-polar (11{overscore (2)}0) a-plane GaN seed layers reduces threading dislocations in the GaN films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the GaN films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth.
146 Citations
22 Claims
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1. A method of reducing threading dislocation densities in a non-polar a-plane gallium nitride thin film, comprising:
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(a) depositing a dielectric regrowth mask on the non-polar a-plane gallium nitride thin film;
(b) patterning the deposited mask; and
(c) performing a selective regrowth to achieve an overgrowth based on the patterned mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A non-polar a-plane gallium nitride thin film with reduced threading dislocation densities, wherein the thin film is created using a process comprising:
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(a) depositing a dielectric regrowth mask on the non-polar a-plane gallium nitride thin film;
(b) patterning the deposited mask; and
(c) performing a selective regrowth to achieve an overgrowth based on the patterned mask. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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