Multilayer integrated circuit copper plateable barriers
First Claim
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1. A method for forming integrated circuit copper lines, comprising:
- forming a trench in a dielectric layer;
forming a first metal layer in said trench using physical vapor deposition and a high atomic number metal wherein said high atomic number metal is selected from a group consisting of Ruthenium, Iridium, and Rhodium;
forming a second metal layer in said trench contacting on said first metal layer using chemical vapor deposition and a high atomic number metal wherein said high atomic number metal is selected from a group consisting of Ruthenium, Iridium, and Rhodium; and
filling said trench with copper by electroplating copper directly on said second metal layer.
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Abstract
A trench (70) is formed in a dielectric layer (20). A first metal layer (80) is formed in the trench using physical vapor deposition. A second metal layer (100) is formed in the trench (70) over the first metal layer (80) using chemical vapor deposition. Copper (110) is used to fill the trench (70) by electroplating copper directly onto the second metal (100).
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Citations
5 Claims
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1. A method for forming integrated circuit copper lines, comprising:
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forming a trench in a dielectric layer;
forming a first metal layer in said trench using physical vapor deposition and a high atomic number metal wherein said high atomic number metal is selected from a group consisting of Ruthenium, Iridium, and Rhodium;
forming a second metal layer in said trench contacting on said first metal layer using chemical vapor deposition and a high atomic number metal wherein said high atomic number metal is selected from a group consisting of Ruthenium, Iridium, and Rhodium; and
filling said trench with copper by electroplating copper directly on said second metal layer. - View Dependent Claims (2, 3, 4, 5)
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Specification