Conductive thin film for semiconductor device, semiconductor device, and method of manufacturing the same

• US 6,900,461 B2
• Filed: 05/10/2002
• Issued: 05/31/2005
• Est. Priority Date: 06/14/2001
• Status: Expired due to Fees

• Current Assignee: Idemitsu Kosan Company Limited
• Original Assignee: Idemitsu Kosan Company Limited
• Inventors: Inoue, Kazuyoshi, Matsuzaki, Shigeo
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Thinh T
• Application Number:
  US10/344,659
• Publication Number:
  US 20040031963A1
• Time in Patent Office: 1,117 Days
• Field of Search: 257/59, 257/60, 257/66, 438/151, 438/166, 438/152, 427/69, 427/49
• US Class Current: 257/59
• CPC Class Codes: H01L 21/2855 by physical means, e.g. sputtering, evaporation H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28568 the conductive layers comprising transition metals H01L21/28518 takes precedence
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 23/53247 Noble-metal alloys
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device 1 obtained by depositing, on a substrate 2, a gate electrode 4 formed by a conductive thin film containing Mo atoms and Ag atoms, a gate insulating film 6, an α-Si:H(i) film 8, a channel protection layer 10, an α-Si:H(n) film 12, a source/drain electrode 14 formed by a conductive thin film containing Mo atoms and Ag atoms, a source/drain insulating film 16, and a drive electrode 18. By using a conductive thin film containing Mo atoms and Ag atoms, the gate electrode 4 and the source/drain electrode 14 are formed to manufacture the semiconductor device 1. Thus, the conductive thin film for a semiconductor device, having high adhesion strength to a substrate, an insulating layer, and the like, a semiconductor device which operates stably without deteriorating the performance, and a method of efficiently manufacturing the conductive thin film and the semiconductor device can be provided.

Claims

1. A conductive thin film for a semiconductor device, containing Ag atoms and 1 to 30% by weight of Mo atoms.

2. The conductive thin film for a semiconductor device according to claim 1, which is a film comprising Mo atoms and Ag atoms and optionally any of Cu atoms, In atoms, and Ga atoms.

3. The conductive thin film for a semiconductor device according to claim 1, wherein a resistivity of the conductive thin film is 5 μ

Ω

·

cm or less.

4. The conductive thin film for a semiconductor device according to claim 1, wherein the Mo atoms are Mo atoms derived from an Mo/Al compound, an Mo/Be compound, an Mo/Ga compound, an Mo/Ge compound, an Mo/Ir compound, an Mo/Pt compound, an Mo/Re compound, an Mo/Si compound, an MoW alloy, an MoTa alloy, or an MoRh alloy.

5. A method of manufacturing the conductive thin film for a semiconductor device according to claim 1,

comprising forming the conductive thin film by sputtering.

6. The method of manufacturing the conductive thin film for a semiconductor device according to claim 5, wherein a sputtering target obtained by reducing, rolling, and sintering a mixture made of an Ag oxide and an Mo oxide is used.

7. The method of manufacturing a conductive thin film for a semiconductor device according to claim 5, wherein a sputtering target obtained by reducing, rolling, and sintering a mixture made of one or more kinds of oxides selected from oxides of Al, Be, In, Ga, Ge, Ir, Pt, Re, Si, W, Ta, and Rh, an Ag oxide, and an Mo oxide is used.

9. A method of manufacturing the semiconductor device according to claim 8, comprising forming at least one of a gate electrode and a source/drain electrode by a conductive thin film formed by using the method of manufacturing a conductive thin film for a semiconductor device according to claim 3.

10. The conductive thin film for a semiconductor device according to claim 3, wherein the resistivity of the conductive thin film is 3 μ

Ω

·

cm or less.

11. The conductive thin film for a semiconductor device according to claim 1, wherein the Mo atoms are present in an amount of 2 to 15% by weight.

8. A semiconductor device comprising a gate electrode and a source/drain electrode, wherein at least one of the gate electrode and the source/drain electrode is formed of a semiconductor device conductive thin film containing Ag atoms and 1 to 30 wt. by weight of Mo atoms.