Surface-emitting semiconductor light device

• US 6,900,473 B2
• Filed: 06/25/2002
• Issued: 05/31/2005
• Est. Priority Date: 06/25/2001
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takahashi, Koichi, Sekiguchi, Hideki, Takimoto, Kazuhiro, Yamashita, Atsuko, Yoshitake, Shunji
• Primary Examiner(s): Tran, Minhloan
• Assistant Examiner(s): TRAN, TAN N
• Application Number:
  US10/178,714
• Publication Number:
  US 20020195609A1
• Time in Patent Office: 1,071 Days
• Field of Search: 257/81, 257/95, 257/98, 257/99, 257/100, 257/103, 257/46
• US Class Current: 257/95
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting device is disclosed in which a semiconductor multilayer structure including a light emitting layer is formed on a substrate and light is output from the opposite surface of the semiconductor multilayer structure from the substrate. The light output surface is formed with a large number of protrusions in the form of cones or pyramids. To increase the light output efficiency, the angle between the side of each protrusion and the light output surface is set to between 30 and 70 degrees.

Claims

1. A surface-emitting semiconductor light emitting device comprising:

a substrate having a major surface; and

a semiconductor multilayer structure formed on the major surface of the substrate and including a light emitting layer, visible light being output from the opposite surface of the semiconductor multilayer structure and the light output surface having been subjected to a roughening process so that a large number of protrusions and recesses is formed thereon, said protrusions and recesses defining peaks and valleys and a height between the maximum peak and the lowest valley being between 50 nm and a wavelength of visible light emitted by the light emitting layer, wherein the protrusions and recesses are formed periodically with a period set to 0.5 λ

or less, where λ

is the wavelength of the emitted visible light.

2. The device according to claim 1, wherein the semiconductor multilayer structure has a double heterostructure in which an active layer is sandwiched between cladding layers, a transparent electrode is formed on the opposite cladding layer of the double heterostructure from the substrate, and a surface of the cladding layer immediately under the transparent electrode has been subjected to the roughening process.

3. The device according to claim 2, wherein the active layer is made of InGaAlP and the cladding layers are each made of InAlP.

4. The device according to claim 1, wherein the semiconductor multilayer structure has a double heterostructure in which, an active layer is sandwiched between cladding layers, a current diffusing layer is formed on the opposite cladding layer of the double heterostructure from the substrate, and the surface of the current diffusing layer has been subjected to the roughening process.

5. The device according to claim 1, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is within a range in which a graded index effect is ensured.

6. The device according to claim 1, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is set to 0.2 μ

m or less.

7. A surface-emitting semiconductor light emitting device comprising:

a substrate having a major surface;

a semiconductor multilayer structure formed on the major surface of the substrate and including a light emitting layer, visible light being output from the opposite surface of the multilayer structure from the substrate; and

an antireflection film formed on the light output surface of the semiconductor multilayer structure and having its surface roughened so that a large number of protrusions and recesses is formed thereon, said protrusions and recesses defining peaks and valleys and a height between the maximum peak and the lowest valley being between 50 nm and a wavelength of visible light emitted by the light emitting layer, wherein the protrusions and recesses are formed periodically with a period set to 0.5 λ

or less, where λ

is the wavelength of the emitted visible light.

8. The device according to claim 7, wherein a refractive index of the antireflection film is set higher than that of a transparent resin which is applied to the light output surface of the semiconductor multilayer structure but lower than that of a top layer of the semiconductor multilayer structure.

9. The device according to claim 7, wherein the semiconductor multilayer structure has a double heterostructure in which an active layer is sandwiched between cladding layers and a current diffusing layer is formed on the opposite cladding layer of the double heterostructure from the substrate.

10. The device according to claim 9, wherein the active layer is made of InGaAlP and the cladding layers are each made of InAlP.

11. The device according to claim 7, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is within a range in which a graded index effect is ensured.

12. The device according to claim 7, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is set to 0.2 μ

m or less.

13. A surface-emitting semiconductor light emitting device comprising:

a substrate having a major surface;

a semiconductor multilayer structure formed on the major surface of the substrate and including a light emitting layer, visible light being output from the opposite surface of the multilayer structure from the substrate;

a first electrode formed in selected areas of the light output surface of the semiconductor multilayer structure;

an antireflection film formed on the light output surface of the semiconductor multilayer structure except the areas of the first electrode and has its surface roughened so that a large number of protrusions and recesses is formed thereon;

a second electrode formed over the entire rear surface of the substrate; and

said protrusions and recesses defining peaks and valleys, and a height between the maximum peak and the lowest valley being between 50 nm and a wavelength of visible light emitted by the light emitting layer, wherein the protrusions and recesses are formed periodically with a period set to 0.5 λ

or less, where λ

is the wavelength of the emitted visible light.

14. The device according to claim 13, wherein a refractive index of the antireflection film is set higher than that of a transparent resin which is applied to the light output surface of the semiconductor multilayer structure but lower than that of a top layer of the semiconductor multilayer structure.

15. The device according to claim, 13, wherein the semiconductor multilayer structure has a double heterostructure in which an active layer is sandwiched between cladding layers and a current diffusing layer is formed on the opposite cladding layer of the double heterostructure from the substrate.

16. The device according to claim 15, wherein the active layer is made of InGaAlP and the cladding layers are each made of InAlP.

17. The device according to claim 13, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is within a range in which a graded index effect is ensured.

18. The device according to claim 13, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is set to 0.2 μ

m or less.

19. A surface-emitting semiconductor light emitting device comprising:

a substrate made of a compound semiconductor of a first conductivity type;

a double heterostructure formed on the substrate and comprising a cladding layer of the first conductivity type, an active layer, and a cladding layer of a second conductivity type;

a current diffusing layer of the second conductivity type formed on the cladding layer of the second conductivity type.of the double heterostructure;

a contact layer of the second conductivity type formed on the current diffusing layer;

an upper electrode selectively formed on the contact layer;

a lower electrode formed on the rear surface of the substrate; and

an antireflection film formed on the contact layer except its portions where the upper electrode is formed,

the antireflection film having its surface roughened so that a large number of neighboring protrusions and recesses is formed thereon, said protrusions and recesses defining peaks and valleys, and a height between the maximum peak and the lowest valley being between 50 nm and a wavelength of visible light emitted by the light emitting layer, and

the protrusions and recesses are formed periodically with a period set to 0.5 λ

or less, where λ

is the wavelength of the emitted visible.

20. The device according to claim 19, wherein the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is within a range in which a graded index effect is ensured.

21. The device according to claim the protrusions and recesses are formed at a regular interval and a pitch of the protrusions is set to 0.2 μ

m or less.