Probing device and manufacturing method thereof, as well as testing apparatus and manufacturing method of semiconductor with use thereof

• US 6,900,646 B2
• Filed: 04/10/2002
• Issued: 05/31/2005
• Est. Priority Date: 04/03/1998
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi, Ltd.
• Inventors: Hasebe, Akio, Kasukabe, Susumu
• Primary Examiner(s): Cuneo, Kamand
• Assistant Examiner(s): Nguyen, Jimmy
• Application Number:
  US10/119,077
• Publication Number:
  US 20020135387A1
• Time in Patent Office: 1,147 Days
• Field of Search: 324/754, 324/758, 324/158.1, 324/765, 324/761, 324/763, 324/725, 439/912, 439/70, 439/68, 439/482, 439/66, 295/93, 298/25, 298/59
• US Class Current: 324/750.16
• CPC Class Codes: G01R 1/06738 related to tip portion
• CPC Class Codes: G01R 1/0735 arranged on a flexible frame or film
• CPC Class Codes: G01R 3/00 Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments , e.g. of probe tips
• CPC Class Codes: H05K 3/4007 Surface contacts, e.g. bumps H05K3/4092 takes precedence; deposition of finish layers on pads H05K3/24; forming solder bumps H05K3/3457

Abstract

A probing device for electrically contacting with a plurality of electrodes 3, 6 aligned on an object 1 to be tested so as to transfer electrical signal therewith, comprising: a wiring sheet being formed by aligning a plurality of contact electrodes 21, 110b, corresponding to each of said electrodes, each being planted with projecting probes 20, 110a covered with hard metal films on basis of a conductor thin film 41 formed on one surface of an insulator sheet 22 of a polyimide film by etching thereof, while extension wiring 23, 110c for electrically connecting to said each of said contact electrodes being formed on basis of a conductor thin film formed on either said one surface or the other surface opposing thereto of said insulator sheet of the polyimide film; and means for giving contacting pressure for obtaining electrical conduction between said extension wiring and said object to be tested by contacting tips of said projecting contact probe formed onto said each contact electrode through giving pressuring force between said wiring sheet and said object to be tested.

Claims

1. In the production of a semiconductor device, a method of testing the semiconductor device comprising;

a positioning step which positions said semiconductor device to be tested at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device, said plurality of projecting contacting tips being formed by etching a first conductor layer or a second conductor layer on said first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet; and

a signal transferring step which transfers electric signals to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips on a single contact electrode contact with one electrode of said semiconductor device.

2. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein each of said plurality of projecting contacting tips is from 1 μ

m to 200 μ

m in height.

3. In the production of a semiconductor device, a method testing the semiconductor device as defined in claim 1,

wherein said contact electrode of said object semiconductor device is from 200 μ

m to 600 μ

m in diameter.

4. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein said semiconductor device is tested in a burn-in state of giving electrical and thermal stresses under the condition of a set temperature.

5. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein said electric signals re transferred to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips which is formed on a surface of an insulator sheet and a wiring conductor formed on an opposite surface of said insulator sheet connected with said contact electrode by a via hole.

6. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein each of said plurality of projecting contacting tips has a flat outer end which contacts said electrode of said semiconductor device.

7. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein said connection part includes a wiring sheet formed from said wiring conductor and said contact electrode having said plurality of projecting contact probes, is supported by a supporting member having means for applying approximately constant contacting pressure to said wiring sheet to obtain electrical conduction between said contact electrode having said plurality of projecting contact probes and said electrode of said semiconductor device.

8. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein said plurality of projecting contacting tips are cylindrical.

9. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein on a wiring sheet having said wiring conductor and said insulating sheet, an element or part connected with said wiring conductor adjusts impedance and passes said test signal during said signal transferring step.

10. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 1,

wherein said electrode of said semiconductor device with which said plurality of projecting contacting tips on a single contact electrode of said testing apparatus contact, is a bump.

11. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device comprising;

an aligning step which aligns a plurality of semiconductor devices on a wafer;

a positioning step which positions said wafer to be tested at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device aligned on said wafer, said plurality of projecting contacting tips being formed by etching a first conductor layer or a second conductor layer on said first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet;

a signal transferring step which transfers electric signals to said electrode of said semiconductor device aligned on said wafer from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

a dividing step which divides said wafer into a plurality of parts of individual semiconductor devices; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips on said contact electrode contact with one electrode of said semiconductor device.

12. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 11,

wherein each of said plurality of projecting contacting tips if from 1 μ

m to 200 μ

m in height.

13. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 11,

wherein said semiconductor device is tested in a burn-in state of giving electrical and thermal stresses under the condition of a set temperature.

14. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 11,

wherein said electric signals are transferred to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips formed on a surface of an insulator sheet and a wiring conductor formed on an opposite surface of said insulator sheet connected with said contact electrode by a via hole.

15. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 11,

wherein each of said plurality of projecting contacting tips has a flat outer end which contacts said electrode of said semiconductor device.

16. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 11,

wherein said plurality of projecting contacting tips are cylindrical.

17. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 11,

wherein on a wiring sheet having said wiring conductor and said insulating sheet, an element or part connected with said wiring conductor adjusts impedance and passes said test signal during said signal transferring step.

18. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 11,

wherein said electrode of said semiconductor device with which said plurality of projecting contacting tips on a single contact electrode of said testing apparatus contact, is a bump.

19. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device comprising;

an aligning step which aligns a plurality of semiconductor devices on a wafer;

a dividing step which divides said wafer into a plurality of parts of individual semiconductor devices;

a positioning step which positions an individual semiconductor device to be tested at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device, said plurality of projecting contacting tips being formed by etching a first conductor layer or a second conductor layer on said first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet;

a signal transferring step which transfers electric signals to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips contact with one electrode of said semiconductor device.

20. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 19,

wherein each of said plurality of projecting contacting tips is from 1 μ

m to 200 μ

m in height.

21. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 19,

wherein said semiconductor device is tested in a burn-in state of giving electrical and thermal stresses under the condition of a set temperature.

22. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 19,

wherein said electric signals are transferred to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips formed on a surface of an insulator sheet and a wiring conductor formed on an opposite surface of said insulator sheet connected with said contact electrode by a via hole.

23. In the production of a wafer having a plurality of aligned semiconductor devices mounted thereon, a method of testing each semiconductor device as defined in claim 19,

wherein each of said plurality of projecting contacting tips has a flat outer end which contacts with said electrode of said semiconductor device.

24. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 19,

wherein said plurality of projecting contacting tips are cylindrical.

25. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 19,

wherein on a wiring sheet having said wiring conductor and said insulating sheet, an element or part connected with said wiring conductor adjusts impedance and passes said test signal during said signal transferring step.

26. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 19,

wherein said electrode of said semiconductor device with which said plurality of projecting contacting tips on a single contact electrode of said testing apparatus contact, is a bump.

27. In the production of a semiconductor device, a method of testing the semiconductor device comprising;

a positioning step which positions said semiconductor device to be tested at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device, said plurality of projecting contacting tips being formed by electroplating with a mask formed on a first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet;

a signal transferring step which transfers electric signals to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips on a single contact electrode contact with one electrode of said semiconductor device.

28. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 27,

wherein said plurality of projecting contacting tips are cylindrical.

29. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 27,

wherein on a wiring sheet having said wiring conductor and said insulating sheet, an element or part connected with said wiring conductor adjusts impedance and passes said test signal during said signal transferring step.

30. In the production of a semiconductor device, a method of testing the semiconductor device as defined in claim 27,

wherein said electrode of said semiconductor device with which said plurality of projecting contacting tips on a single contact electrode of said testing apparatus contact, is a bump.

31. A method of manufacturing a semiconductor device comprising;

a positioning step which positions said semiconductor device at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device, said plurality of projecting contacting tips being formed by etching a first conductor layer or a second conductor layer on said first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet; and

a signal transferring step which transfers electric signals to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips on a single contact electrode contact with one electrode of said semiconductor device.

32. A method of manufacturing a wafer having a plurality of aligned semiconductor devices comprising;

an aligning step which aligns a plurality of semiconductor devices on a wafer;

a positioning step which positions said wafer at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device aligned on said wafer, said plurality of projecting contacting tips being formed by etching a first conductor layer or a second conductor layer on said first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet;

a signal transferring step which transfers electric signals to said electrode of said semiconductor device aligned on said wafer from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

a dividing step which divides said wafer into a plurality of parts of individual semiconductor devices; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips on said contact electrode contact with one electrode of said semiconductor device.

33. A method of manufacturing a wafer having a plurality of aligned semiconductor devices comprising;

an aligning step which aligns a plurality of semiconductor devices on a wafer;

a dividing step which divides said wafer into a plurality of parts of individual semiconductor devices;

a positioning step which positions an individual semiconductor device to be tested at set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device, said plurality of projecting contacting tips being formed by etching a first conductor layer or a second conductor layer on said first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet;

a signal transferring step which transfers electric signals to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips contact with one electrode of said semiconductor device.

34. A method of manufacturing a semiconductor device comprising;

a positioning step which positions said semiconductor device at a set position;

a contacting step which contacts a contact electrode having a plurality of projecting contacting tips formed on a first surface of an insulating sheet of a connection part of a testing apparatus with an electrode of said semiconductor device, said plurality of projecting contacting tips being formed by electroplating with a mask formed on a first conductor layer, said first conductor layer being formed on said first surface of said insulating sheet;

a signal transferring step which transfers electric signals to said electrode of said semiconductor device from said testing apparatus through said contact electrode having said plurality of projecting contacting tips and a wiring conductor connected with said contact electrode for conducting a test signal on said semiconductor device; and

wherein during said contacting step and said signal transferring step, said plurality of projecting contacting tips on a single contact electrode contact with one electrode of said semiconductor device.