Shared-current electronic systems
First Claim
1. Electronic apparatus (10, 20, 26, 30, 38, 48, 66, 70, 82, 90, 96, 100, 108, 118, or 122) which comprises:
- a solid-state electronic device (Q1, Q3, or Q5) that includes higher and lower dc voltage terminals;
an other electronic device (Q2, Q4, Q6, Q7, Q8, 92, 110, 112, Q11, or Q12) that includes higher and lower dc voltage terminals;
means, comprising means (L2) for connecting said lower dc voltage terminal of one of said electronic devices to said higher dc voltage terminal of an other of said electronic devices, for connecting said electronic devices in dc series between a dc source terminal and an electrical ground;
means, comprising a capacitor (C5, C6, or C19) that is connected between said lower dc voltage terminal of said one electronic device and said electrical ground, for rf decoupling said dc series-connected electronic devices; and
said means for if decoupling further comprises means (86) for making an effective series resistance, between said lower dc voltage terminal of said one electronic device and said electrical ground, lower than a porcelain capacitor that resonates at an rf frequency of said one electronic device.
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Accused Products
Abstract
Shared-current electronic systems (10, 20, 26, 30, 38, 48, 66, 70, 82, 90, 96, 100, 104, 108, 118, and 122) include two or more solid-state electronic devices, such as a solid-state amplifying device Q1, a baseband processor 110, and a multiplier/upconverter 112, that are connected in dc series or dc series-parallel, and that either fixedly or variably share percentages of a dc supply voltage. Various embodiments produce separate rf outputs, variably shift the phase of a single rf output, variably shift rf power between/among rf outputs, or produce a frequency-compressed modulation. RF decoupling of the dc series-connected electronic devices comprises making an effective series resistance (ESR) of an rf decoupling capacitance lower than the ESR of a porcelain capacitor that resonates at the operating frequency of the electronic device that is being decoupled.
19 Citations
31 Claims
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1. Electronic apparatus (10, 20, 26, 30, 38, 48, 66, 70, 82, 90, 96, 100, 108, 118, or 122) which comprises:
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a solid-state electronic device (Q1, Q3, or Q5) that includes higher and lower dc voltage terminals;
an other electronic device (Q2, Q4, Q6, Q7, Q8, 92, 110, 112, Q11, or Q12) that includes higher and lower dc voltage terminals;
means, comprising means (L2) for connecting said lower dc voltage terminal of one of said electronic devices to said higher dc voltage terminal of an other of said electronic devices, for connecting said electronic devices in dc series between a dc source terminal and an electrical ground;
means, comprising a capacitor (C5, C6, or C19) that is connected between said lower dc voltage terminal of said one electronic device and said electrical ground, for rf decoupling said dc series-connected electronic devices; and
said means for if decoupling further comprises means (86) for making an effective series resistance, between said lower dc voltage terminal of said one electronic device and said electrical ground, lower than a porcelain capacitor that resonates at an rf frequency of said one electronic device. - View Dependent Claims (9, 10, 11, 17, 18, 19, 20, 21, 22)
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2. Electronic apparatus (48, 66, 70, 82, 90, 96, 100, 108, 118, or 122) which comprises:
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a first electronic device (Q1, Q3, or Q5 that includes higher and lower dc voltage terminals;
a second electronic device (Q2, Q4, Q6, 92, 110, 112, Q11, or Q12) that includes higher and lower dc voltage terminals;
means, comprising means (L2) for connecting said lower dc voltage terminal of one of said electronic devices to said higher dc voltage terminal of an other of said electronic devices, for connecting said electronic devices in dc series between a dc source terminal and an electrical ground;
means (54, 72 or VD1) for proportioning first and second percentages of a dc source voltage, when applied to said dc source terminal, to said first and second electronic devices, respectively;
means, comprising a capacitor (C5, C6, or C19) that is connected between said lower dc voltage terminal of said one electronic device and said electrical ground, for rf decoupling said dc series-connected electronic devices; and
said means for rf decoupling further comprises means (86) for making an effective series resistance, between said lower dc voltage terminal of said one electronic device and said electrical ground, lower than a porcelain capacitor that resonates at an rf frequency of said one electronic device. - View Dependent Claims (12, 13, 14)
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3. Electronic apparatus (108, 118, or 122) which comprises:
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a baseband processing device (110) having higher and lower dc voltage terminals;
a solid-state electronic device (Q1, Q2, or Q3), having higher and lower dc voltage terminals;
means (112, Q11, Q12) for delivering an rf signal from said baseband processing device to said solid-state electronic device;
means, comprising means (L2) for connecting said lower dc voltage terminal of one of said devices to said higher dc voltage terminal of an other of said devices, for connecting said devices in dc series between a dc source terminal end an electrical ground;
means (VD1) for proportioning first and second percentages of a dc supply voltage, when applied to said dc source terminal, to respective ones of said devices; and
means, comprising a capacitor (C5 or C19) that is connected between said lower dc voltage terminal of said one electronic device and said electrical ground, for rf decoupling said dc series-connected electronic devices. - View Dependent Claims (15, 23, 24, 25, 26, 27)
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4. Electronic apparatus (108, 118, or 122) which comprises:
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a baseband processing device (110) having higher and lower dc voltage terminals;
a multiplier/up-converter (112) being connected in rf series to said baseband processing device;
a solid-state amplifying device (Q1, Q3, or Q5) having higher and lower dc voltage terminals;
means (Q11, Q12) for connecting said solid-state amplifying device in rf series to said multiplier/up-converter;
means, comprising means (L2) for connecting said lower dc voltage terminal of said solid-state amplifying device to said higher dc voltage terminal of said baseband processing device, for connecting said solid-state amplifying device and said baseband processing device in dc series between a dc source terminal and an electrical ground;
means (VD1) for proportioning first and second percentages of a dc supply voltage, when applied to said dc source terminal, to said solid-state amplifying device and to said baseband processing device, respectively; and
means, comprising a capacitor (C5) that is connected between said lower dc voltage terminal of said solid-state amplifying device and said electrical ground, for rf decoupling said solid-state amplifying device and said baseband processing device. - View Dependent Claims (16)
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5. A method for processing rf signals which comprises:
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a) connecting a solid-state electronic device and an other electronic device in dc series between a dc source voltage and an electrical ground;
b) said connecting step comprises connecting a lower dc voltage terminal of one of said electronic devices to an rf choke, and connecting said rf choke to a higher dc voltage terminal of an other of said electronic devices;
c) separately processing rf signals in said electronic devices;
d) proportioning first and second percentages of said dc source voltage to separate ones of said electronic devices;
e) rf decoupling said electronic devices; and
f) said rf decoupling step comprises providing a capacitance between said lower dc voltage terminal and said electrical ground that is lower than an effective series resistance of a porcelain capacitor that resonates at an rf frequency of said one electronic device.
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6. A method for processing rf signals which comprises:
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a) connecting first and second electronic devices in dc series between a dc source voltage and an electrical ground;
b) separately processing rf signals in said first and second electronic devices;
c) proportioning first and second percentages of said dc source voltage between said first and second electronic devices;
d) rf decoupling said electronic devices; and
e) said rf decoupling step comprises providing a capacitance, between a lower dc voltage terminal of an upper one of said electronic devices and said electrical ground, that is lower than an effective series resistance of a porcelain capacitor that resonates at an rf frequency of said first electronic device.
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7. A method for processing rf signals which comprises:
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a) rf connecting a baseband processing device and a solid-state electronic device;
b) connecting said solid-state electronic device and said baseband processing device in dc series between a dc source terminal and an electrical ground;
c) said dc series-connecting step comprises connecting a lower dc voltage terminal of one of said devices to a higher dc voltage terminal of an other of said devices;
d) applying a dc source voltage to said dc source terminal;
e) separately proportioning first and second percentages of said dc source voltage to said devices;
f) rf decoupling said devices; and
g) said rf decoupling step comprises connecting a capacitor between said lower dc voltage terminal of said one device and said electrical ground. - View Dependent Claims (28, 29, 30, 31)
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8. A method for processing rf signals which comprises:
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a) rf connecting a baseband processing device to a multiplier/up-converter;
b) rf connecting said multiplier/up-converter to a solid-state amplifying device;
c) connecting said solid-state amplifying device and said baseband processing device in dc series with a dc source terminal and an electrical ground;
d) said dc series-connecting step comprises connecting a lower dc voltage terminal of said solid-state amplifying device to an rf choke, and connecting said rf choke to a higher dc voltage terminal of said baseband processing device;
e) applying a dc source voltage to said dc source terminal;
f) proportioning first and second percentages of said dc source voltage to separate ones of said devices;
g) rf decoupling said solid-state amplifying device and said baseband processing device; and
h) said rf decoupling step comprises connecting a capacitor between said lower dc voltage terminal and said electrical ground.
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Specification