Power module

• US 6,900,986 B2
• Filed: 03/29/2004
• Issued: 05/31/2005
• Est. Priority Date: 05/16/2000
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Ryoden Semiconductor System Engineering Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation), Ryoden Semiconductor System Engineering Corporation
• Inventors: Kimoto, Nobuyoshi, Nakajima, Dai, Yoshimatsu, Naoki, Yoshida, Takanobu, Koga, Masuo, Majumdar, Gourab, Fukada, Masakazu
• Primary Examiner(s): THOMPSON, GREGORY D
• Application Number:
  US10/810,832
• Publication Number:
  US 20040179341A1
• Time in Patent Office: 428 Days
• Field of Search: 174/16.3, 174/52.4, 174/252, 165/80.2, 165/80.3, 165/185, 257706-707, 257712-713, 257718-719, 257726-727, 257723-724, 257/700, 257/728, 257/678, 257/687, 257690-693, 361/328, 361/306.2, 361704-722, 361/734, 361/763, 361/766, 361/735, 361/744, 361/780, 361/782, 361/793, 361/794
• US Class Current: 361/704
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/4811 Connecting to a bonding area of the semiconductor or solid-state body located at the far end of the body with respect to the bonding area outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49109 outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/057 the leads being parallel to the base
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01007 Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H02M 7/003 : Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A power module includes a first substrate with a power semiconductor device mounted thereon, a second substrate with a control circuit for controlling the power semiconductor device formed thereon, a smoothing capacitor electrically connected to the power semiconductor device for smoothing a voltage to be externally supplied to the power semiconductor device, and a case including a case frame and a case lid. The case has an interior in which the first substrate, the second substrate and the smoothing capacitor are disposed, and the smoothing capacitor is disposed in contact with a side surface of the case frame.

Claims

1. A power module comprising:

a first substrate with a power semiconductor device mounted thereon;

a second substrate with a control circuit for controlling said power semiconductor device formed thereon;

a smoothing capacitor electrically connected to said power semiconductor device for smoothing a voltage to be externally supplied to said power semiconductor device; and

a case including a case frame and a case lid, said case having an interior in which said first substrate, said second substrate and said smoothing capacitor are disposed, and said smoothing capacitor is disposed in contact with a side surface of said case frame.

2. The power module according to claim 1, wherein said smoothing capacitor is a ceramic capacitor.

3. The power module according to claim 1, wherein said smoothing capacitor is buried in said case frame.

4. A power module comprising:

a first substrate with a power semiconductor device mounted thereon;

a second substrate with a control circuit for controlling said power semiconductor device formed thereon;

a smoothing capacitor electrically connected to said power semiconductor device for smoothing a voltage to be externally supplied to said power semiconductor device;

a case including a case frame and a case lid, said case having an interior in which said first substrate, said second substrate and said smoothing capacitor are disposed; and

a heat sink for dissipating heat generated from said first substrate, said first substrate and said case frame being placed on said heat sink,

wherein said smoothing capacitor is disposed on said heat sink.