High voltage switch circuitry
First Claim
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1. A method of setting a state of a one-time programmable device comprising:
- placing the one-time programmable device in a programming mode;
selecting at least one memory cell from a plurality of memory cells in the one-time programmable device; and
setting a state of said selected at least one memory cell having at least two thin gate-ox fuse elements, at least one of said thin gate-ox fuse elements having an oxide that is about 2.5 nm thick or less.
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Abstract
The present invention relates to a high voltage switch used with a one-time programmable memory device and a method of setting a state of a one-time programmable memory device using such a high voltage switch. The memory device includes a plurality of one time programmable memory cells arranged in an array and adapted to be programmed using a high voltage, wherein each of the memory cells includes at least one storage element and two gated fuses connected to the storage element. A high voltage switch is connected to at least one of the memory cells and is adapted to switch in a high voltage.
22 Citations
20 Claims
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1. A method of setting a state of a one-time programmable device comprising:
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placing the one-time programmable device in a programming mode;
selecting at least one memory cell from a plurality of memory cells in the one-time programmable device; and
setting a state of said selected at least one memory cell having at least two thin gate-ox fuse elements, at least one of said thin gate-ox fuse elements having an oxide that is about 2.5 nm thick or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A The method of setting a state of a one-time programmable device comprising:
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placing the one-time programmable device in a programming mode;
selecting at least one memory cell from a plurality of memory cells in the one-time programmable device; and
switching in a high programming voltage, setting a state of said selected memory cell having two thin gate-ox fuse elements, each of said thin gate-ox fuse elements having an oxide that is about 2.5 nm thick or less. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification