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High voltage switch circuitry

  • US 6,901,004 B2
  • Filed: 05/28/2004
  • Issued: 05/31/2005
  • Est. Priority Date: 01/08/2002
  • Status: Active Grant
First Claim
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1. A method of setting a state of a one-time programmable device comprising:

  • placing the one-time programmable device in a programming mode;

    selecting at least one memory cell from a plurality of memory cells in the one-time programmable device; and

    setting a state of said selected at least one memory cell having at least two thin gate-ox fuse elements, at least one of said thin gate-ox fuse elements having an oxide that is about 2.5 nm thick or less.

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