Method for depositing nanolaminate thin films on sensitive surfaces
First Claim
1. A method of forming a conductive nanolaminate structure on a substrate within a reaction space comprising depositing at least three adjacent thin film layers by atomic layer deposition (ALD) type processes comprising sequential and alternating self-saturating surface reactions, including at least one metal compound layer, wherein each of the at least three thin film layers is in a different phase from directly adjacent ones of the at least three thin film layers.
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Accused Products
Abstract
The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surface sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.
205 Citations
21 Claims
- 1. A method of forming a conductive nanolaminate structure on a substrate within a reaction space comprising depositing at least three adjacent thin film layers by atomic layer deposition (ALD) type processes comprising sequential and alternating self-saturating surface reactions, including at least one metal compound layer, wherein each of the at least three thin film layers is in a different phase from directly adjacent ones of the at least three thin film layers.
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17. A method of forming a conductive nanolaminate structure on a substrate susceptible to halide attack within a reaction space by an atomic layer deposition (ALD) process, the nanolaminate structure comprising at least two adjacent thin film layers, including at least one metal compound layer, wherein each of the at least two adjacent thin film layers is in a different phase from directly adjacent ones of the at least two adjacent thin film layers, and wherein the atomic layer deposition process comprises providing alternating pulses of reactants in a plurality of deposition cycles, each cycle comprising:
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supplying a first reactant to chemisorb no more than about one monolayer of a halide species over a surface of the substrate, removing excess first reactant from the reaction space; and
gettering halides from the monolayer prior to repeating the cycle, wherein the surface comprises copper. - View Dependent Claims (18)
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19. A method of forming a conductive nanolaminate structure on a substrate susceptible to halide attack within a reaction space by an atomic layer deposition (ALD) process, the nanolaminate structure comprising at least two adjacent thin film layers, including at least one metal compound layer, wherein each of the at least two adjacent thin film layers is in a different phase from directly adjacent ones of the at least two adjacent thin film layers, and wherein the atomic layer deposition process comprises providing alternating pulses of reactants in a plurality of deposition cycles, each cycle comprising:
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supplying a first reactant to chemisorb no more than about one monolayer of a halide species over a surface of the substrate, removing excess first reactant from the reaction space; and
gettering halides from the monolayer prior to repeating the cycle, wherein the surface is formed by a material less than 5 nm thick over copper.
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20. A method of forming a conductive nanolaminate structure on a substrate susceptible to halide attack within a reaction space by an atomic layer deposition (ALD) process, the nanolaminate structure comprising at least two adjacent thin film layers, including at least one metal compound layer, wherein each of the at least two adjacent thin film layers is in a different phase from directly adjacent ones of the at least two adjacent thin film layers, and wherein the atomic layer deposition process comprises providing alternating pulses of reactants in a plurality of deposition cycles, each cycle comprising:
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supplying a first reactant to chemisorb no more than about one monolayer of a halide species over a surface of the substrate, removing excess first reactant from the reaction space; and
gettering halides from the monolayer prior to repeating the cycle, wherein gettering comprises reducing by exposing the halide-terminated species to a boron compound. - View Dependent Claims (21)
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Specification