Qualifying patterns, patterning processes, or patterning apparatus in the fabrication of microlithographic patterns

• US 6,902,855 B2
• Filed: 08/02/2002
• Issued: 06/07/2005
• Est. Priority Date: 07/15/2002
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: KLA-Tencor Corporation
• Inventors: Hoff, Mike Von den, Peterson, Ingrid B.
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US10/211,156
• Publication Number:
  US 20040009416A1
• Time in Patent Office: 1,040 Days
• Field of Search: 430/30, 382/144, 382/145, 716/19, 716/20, 716/21
• US Class Current: 430/30
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G03F 7/70641 Focus
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects

Abstract

The invention is a method of determining the presence of an anomaly in qualifying a pattern, patterning process, or patterning apparatus used in the fabrication of microlithographic patterns. A preferred implementation of the method qualifies incoming reticles and process conditions on test wafers to maximize the available usable process window for a given reticle exposure tool combination. Practicing this method on test wafers enables the identification of spatial areas where a process will fail first and candidate regions for carrying out defect inspection and metrology. Other preferred implementations of the method qualify masks, reticles, or other patterns characterized by data bases on which are stored image data acquired by practice of aerial image measurement system (AIMS) or design rule checking (DRC) techniques.

Claims

1. A method of qualifying a pattern, patterning process, or a patterning apparatus, comprising:

providing a substrate having a surface covered by a pattern recording material;

causing multiple occurrences of irradiation of a reticle or a mask containing a design pattern, each of the occurrences of irradiation representing a value of a member of a set of lithographic operating variables, and the reticle or mask imparting to the occurrences of irradiation design pattern information corresponding to each of the values of the member of the set;

causing on the pattern recording material occurrences of irradiation carrying the design pattern information imparted by the reticle or mask;

recording in the pattern recording material a spatial pattern corresponding to the design pattern information imparted by the reticle or mask for each of the values of the member of the set, each spatial pattern recorded at a different region of the pattern recording material; and

determining from the recorded spatial patterns a presence of a pattern anomaly associated with the pattern, patterning process, or patterning apparatus.

2. The method of claim 1, in which the set of lithographic operating variables comprises illumination operating variables that include as members at least one of illumination focus, exposure, degree of partial coherence, illumination mode, or numerical aperture.

3. The method of claim 1, in which the occurrences of irradiation are occurrences of light and the pattern recording material is a photoresist material.

4. The method of claim 1, in which:

the different regions are arranged in multiple adjacent rows, each one of the rows including regions of recorded spatial patterns corresponding to a particular value of the member of the set;

the determining of a presence of a pattern anomaly includes taking differences between different pairs of the recorded spatial patterns corresponding to different values of the member of the set; and

comparing the differences between the different pairs to determine which ones of the differences exhibit events that repeat and thereby isolate a possible pattern anomaly.

5. The method of claim 4, in which the reticle is of a single die type.

6. The method of claim 5, in which the particular values of the member of the set represent a range of modulated values of illumination focus.

7. The method of claim 1, in which:

the different regions are arranged in multiple rows and multiple columns, each one of the multiple rows including regions of recorded spatial patterns corresponding to a particular value of the member of the set, and at least some of the multiple columns including regions of the recorded spatial patterns corresponding to different values of the member of the set;

the determining of a presence of a pattern anomaly includes taking differences between different pairs of the recorded spatial patterns in a particular column; and

comparing the differences between the different pairs to determine which ones of the differences exhibit events that repeat and thereby isolate a possible pattern anomaly.

8. The method of claim 7, in which a value of the member of the set represents a reference member value and each of the rows includes multiple reference regions of a recorded spatial pattern corresponding to the reference member value, at least one reference region being positioned between each adjacent pair of regions of recorded spatial patterns corresponding to a particular value of the member of the set.

9. The method of claim 8, in which the reticle is of a single die type.

10. The method of claim 1, in which the determining of a presence of a pattern anomaly is accomplished by comparisons of recorded spatial patterns corresponding to different values of a reference member and only one other member of the set.

11. The method of claim 1, in which the set of lithographic operating variables includes irradiation exposure conditions so that a presence of a pattern anomaly results from effects of irradiation exposure conditions.

12. The method of claim 1 in which:

the different regions are arranged in multiple adjacent rows including first, second, and third regions of recorded spatial patterns corresponding to, respectively, first, second, and third values of an illumination condition member of the set, the first value representing a reference value;

the determining of a presence of a pattern anomaly includes taking a difference between the first and second values and a difference between the first and third values of the illumination condition member; and

comparing the differences to determine whether they exhibit an event that repeats and thereby indicates a possible pattern anomaly.

13. The method of claim 1, in which the pattern anomaly results from a design pattern defect.

14. A method of qualifying a pattern, a patterning process, or a patterning apparatus, comprising:

acquiring multiple spatial patterns corresponding to a lithographic pattern containing a design pattern, the multiple patterns acquired for different values of a member of a set of lithographic variables;

determining a presence of a design pattern anomaly by taking differences between different pairs of the acquired spatial patterns corresponding to different values of the member of the set; and

comparing the differences between the different pairs to determine which ones of the differences exhibit events that repeat and thereby isolate a possible pattern anomaly.

15. The method of claim 14, in which one of the values of the member of the set represents a reference member value.

16. The method of claim 15, in which each of the different pairs includes the reference value.

17. The method of claim 14, in which the multiple spatial patterns correspond to aerial images of the design pattern of a reticle or mask.

18. The method of claim 14, in which the multiple spatial patterns correspond to simulated images of the design pattern of a reticle or mask.

19. The method of claim 14, in which the lithographic pattern is that of a reticle of a single die type.

20. The method of claim 14, in which the pattern anomaly results from a design pattern defect.