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Semiconductor device, method of making the same and liquid crystal display device

  • US 6,903,372 B1
  • Filed: 10/30/2000
  • Issued: 06/07/2005
  • Est. Priority Date: 10/29/1999
  • Status: Expired due to Term
First Claim
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1. A thin-film semiconductor device comprising an insulator, a polycrystalline layer formed on said insulator, and a transistor comprising a source region, a drain region, a gate region, and a channel region formed at the surface portion of said polycrystalline layer, said polycrystalline layer comprising crystal grains of an element selected from the group of Type-IV elements and their alloys, said crystal grains joined with crystal grain boundaries of {111} twin of Diamond structure,wherein said insulator is a glass substrate, said polycrystalline layer is a Si thin-film, said Si thin-film has a thickness of 10 to 150 nm, and said Si thin-film has a plurality of crystal grains having {110} planes parallel to the surface of said substrate, and wherein there is a current path between the source and the drain that is made up only of {110} surface grains.

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