GaN based LED lighting extraction efficiency using digital diffractive phase grating

• US 6,903,379 B2
• Filed: 11/12/2002
• Issued: 06/07/2005
• Est. Priority Date: 11/16/2001
• Status: Expired due to Fees

• Current Assignee: Gelcore (General Electric Company)
• Original Assignee: Gelcore (General Electric Company)
• Inventors: Wang, Michael, Venugopalan, Hari
• Primary Examiner(s): Kang, Donghee
• Application Number:
  US10/291,981
• Publication Number:
  US 20030213969A1
• Time in Patent Office: 938 Days
• Field of Search: 257 94- 99, 257/103, 372 45- 46
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode incorporating an active emitting layer (14) overlying a transparent substrate (10) is provided with a reflective diffraction grating (30) on the bottom surface of the substrate. Emitted light passing downwardly through the substrate is diffracted outwardly toward edges (21) of the substrate and passes out of the die through the edges. This effect enhances the external quantum efficiency of the diode.

Claims

1. A light emitting diode comprising:

(a) a stacked structure having a top surface, a bottom surface, edges extending between said top and bottom surfaces and an emitting junction extending generally in a horizontal plane above the bottom surface, said emitting junction having an emission wavelength;

said stacked structure having vertical directions normal to the emitting junction, and

(b) a reflective periodic diffraction grating disposed below said emitting junction on or in said stacked structure, said grating including a plurality of elements periodically spaced apart from one another in a repeat direction defining a set of first regions and second regions having different vertical elevations, such that said first regions project below said second regions by a predetermined distance, said first and second regions arranged to reflect light at phases differing by π

, the periodic spacing of the first and second regions of said grating being operative to diffract light at said emission wavelength directed vertically downwardly from said emission layer so that a substantial portion of such light is reflectively diffracted in major diffraction directions oblique to the vertical and intersecting the edges of the structure.

2. A light emitting diode as claimed in claim 1 wherein said structure includes a substrate disposed between said junction and said grating, said substrate being transparent to light at said emission wavelength, said substrate defining portions of said edges.

3. A light emitting diode as claimed in claim 2 wherein said grating is arranged so that at least some of the upwardly-diffracted light passes through portions of said edges defined by said substrate.

4. A light emitting diode as claimed in claim 3 wherein said substrate has a thickness t in the vertical direction such that:

t>

w/tan θ

where;

w is the horizontal dimension of the substrate in the repeat direction of the grating; and

θ

is the angle between one said major diffraction direction and the vertical.

5. A light emitting diode as claimed in claim 2 wherein said grating is disposed at the bottom of said substrate.

6. A light emitting diode as claimed in claim 2 wherein said stack structure includes one or more nitride-based semiconductors defining said emitting junction.

7. A light emitting diode as claimed in claim 6 wherein said substrate consists essentially of sapphire.

8. A light emitting diode as claimed in claim 1 wherein said grating is in the form of a plurality of elongated strips extending substantially parallel to one another, each said strip extending in a lengthwise direction perpendicular to said repeat direction, and wherein said stack structure has a dimension x in the lengthwise direction greater than a dimension w in the repeat direction.

9. A light emitting diode as claimed in claim 1 wherein said stacked structure has a critical angle for total internal reflection at said edges of said stacked structure, and said major diffraction directions intercept the edges of the stacked structure at angles to the normal of the edge surface less than said critical angle.

10. The light emitting diode according to claim 9, wherein the said edges are curved.

11. The light emitting diode according to claim 1, wherein said predetermined distance is equal to λ

/4, where λ

is equal to said emission wavelength.

12. The light emitting diode according to claim 11, wherein light reflected from said first regions traverse a path of λ

/2 longer than light reflected from said second regions, where λ

is equal to said emission wavelength.

13. A light emitting diode comprising:

a light emissive stacked structure including;

(i) a substrate having top and bottom principal surfaces transverse to a vertical direction, and

(ii) a light emissive stack disposed on the top principal surface of the substrate,

the light emissive stacked structure having light transmitting edges spaced apart by a horizontal dimension in a horizontal direction transverse to the vertical direction; and

a reflective periodic diffraction grating disposed on or in the bottom principal surface of the substrate and having a grating period in the horizontal direction defining selected non-zeroeth order diffraction directions, the horizontal dimension, a thickness of the light emissive stacked structure, and the grating period being selected such that a substantial portion of vertically oriented light diffracted by the diffraction grating into the selected non-zeroeth order diffraction directions exits the light emissive stacked structure via the light transmitting edges, the reflective periodic diffraction grating including;

first regions and second regions alternating along the horizontal direction to define the grating period, the first and second regions having different vertical elevations, such that the first regions project below the second regions by a predetermined distance selected so that the first and second regions reflect light at phases differing by π

.

14. The light emitting diode as set forth in claim 13, wherein at least about 80% of vertically oriented light emitted by the light emissive stack into the substrate is diffracted into the selected non-zeroeth order diffraction directions.

15. The light emitting diode as set forth in claim 13, wherein substantially no portion of the vertically oriented light emitted by the light emissive stack into the substrate is diffracted into a zeroeth order diffraction direction oriented vertically away from the bottom principal surface of the substrate.

16. The light emitting diode as set forth in claim 13, wherein the selected non-zeroeth order diffraction directions are selected from a group consisting of positive and negative first order diffraction directions.

17. The light emitting diode as set forth in claim 13, wherein the reflective periodic diffraction grating is a binary phase grating having the grating period along the horizontal direction.

18. The light emitting diode as set forth in claim 13, wherein edge surfaces of the light transmitting edges are inclined such that an angle between each selected non-zeroeth order diffraction direction and an edge surface it intersects is less than a critical angle for total internal reflection.