Interdigital capacitor having a cutting target portion

• US 6,903,402 B2
• Filed: 03/26/2003
• Issued: 06/07/2005
• Est. Priority Date: 03/28/2002
• Status: Expired due to Fees

• Current Assignee: Fujitsu Quantum Devices Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Quantum Devices Limited (Fujitsu Limited)
• Inventors: Miyazawa, Naoyuki
• Primary Examiner(s): PHAM, HOAI V
• Application Number:
  US10/396,502
• Publication Number:
  US 20030183884A1
• Time in Patent Office: 804 Days
• Field of Search: 257/296, 257/303, 257/306, 257/307, 257/532, 361/306.3, 361/311, 361/328
• US Class Current: 257/296
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An interdigital capacitor includes a semiconductor substrate, and a pair of comb-like electrodes formed on the semiconductor substrate. At least one of the pair of comb-like electrodes includes a cutting target portion.

Claims

1. An interdigital capacitor comprising:

a semiconductor substrate; and

a pair of comb-like electrodes both formed on the semiconductor substrate and horizontally arranged thereon;

at least one of the pair of comb-like electrodes including a cutting target portion.

2. The interdigital capacitor according to claim 1, wherein:

the pair of comb-like electrodes comprises electrode fingers and bus lines connecting the electrode fingers; and

the cutting target portion is provided in at least one of the bus lines.

3. The interdigital capacitor according to claim 1, wherein:

the pair of comb-like electrodes comprises electrode fingers and bus lines connecting the electrode fingers;

the cutting target portion is provided in at least one of the bus lines; and

the cutting target portion is narrower than other portions of the bus lines.

4. The interdigital capacitor according to claim 1, wherein:

the pair of comb-like electrodes comprises electrode fingers and bus lines connecting the electrode fingers;

the cutting target portion is provided in at least one of the bus lines; and

the cutting target portion is thinner than other portions of the bus lines.

5. The interdigital capacitor according to claim 1, wherein:

the pair of comb-like electrodes comprises electrode fingers and bus lines connecting the electrode fingers;

the cutting target portion is provided in at least one of the bus lines; and

the cutting target portion is positioned on a first side of said at least one of the bus lines opposite to a second side thereof on which the electrode fingers are provided.

6. The interdigital capacitor according to claim 1, wherein:

the pair of comb-like electrodes comprises electrode fingers and bus lines connecting the electrode fingers;

the cutting target portion is provided in at least one of the bus lines; and

the cutting target portion is away from the semiconductor substrate.

7. The interdigital capacitor according to claim 6, wherein the cutting target portion is thinner than the bus lines.

8. The interdigital capacitor according to claim 6, further comprising an insulating film between the cutting target portion and said at least one of the bus lines, the cutting target portion being electrically connected to said at least one of the bus lines by means of a via formed in the insulating film.

9. The interdigital capacitor according to claim 1, wherein at least one of the pair of comb-like electrodes has been cut off in the cutting target portion and is divided into two parts.

10. The interdigital capacitor according to claim 1, wherein the cutting target portion includes joint portions, each of which joins some of the electrode fingers and connect joined electrode fingers to a signal line.

11. The interdigital capacitor according to claim 1, wherein:

at least one of the pair of comb-like electrodes has been cut off in the cutting target portion and is divided into two parts; and

a space defined by the two parts is covered by an insulating protection film.

12. The interdigital capacitor according to claim 1, wherein the comb-like electrodes that are paired have respective cutting target portions.

13. The interdigital capacitor as claimed in claim 1, wherein:

each of the pair of comb-like electrodes has the cutting target portion and has first and second electrode portions;

the first and second electrode portions include electrode fingers that have at least one of different widths, lengths and gaps.

14. The interdigital capacitor according to claim 13, wherein the width and gap of the electrode fingers of the first electrode portion are greater than those of the electrode fingers of the second electrode portion.

15. The interdigital capacitor according to claim 13, wherein the length of the electrode fingers of the first electrode portion is shorter than that of the electrode fingers of the second electrode portion.

16. The interdigital capacitor according to claim 13, wherein one of the first and second electrode portions is connected to a signal line.

17. The interdigital capacitor according to claim 13, wherein the pair of comb-like electrodes is divided into parts by cutting.

18. The interdigital capacitor according to claim 1, wherein an electric circuit is formed on the semiconductor substrate, and the interdigital capacitor is a component of the electric circuit.

19. The interdigital capacitor as claimed in claim 1, wherein:

each of the pair of comb-like electrodes into first and second parts at the cutting target portion; and

the first parts being connected to signal lines, and the second parts are electrically isolated from the signal lines.

20. The interdigital capacitor as claimed in claim 19, wherein the first and second parts are arranged side by side.

21. A semiconductor device comprising:

an interdigital capacitor formed on a semiconductor substrate; and

a circuit element formed on the semiconductor substrate,

the interdigital capacitor comprising a pair of comb-like electrodes both formed on the semiconductor substrate and horizontally arranged thereon,

at least one of the pair of comb-like electrodes including a cutting target portion.

22. The semiconductor device as claimed in claim 21, wherein:

each of the pair of comb-like electrodes has the cutting target portion and has first and second electrode portions; and

the first and second electrode portions include electrode fingers that have at least one of different widths, lengths and gaps.

23. The semiconductor device as claimed in claim 21, wherein:

each of the pair of comb-like electrodes is divided into first and second parts at the cutting target portion; and

the first parts being connected to signal lines, and the second parts are electrically isolated from the signal lines.

24. A communication device comprising:

a first circuit having an interdigital capacitor; and

a second circuit processing a transmit or receive signal by using an output signal of the first circuit,

the interdigital capacitor comprising;

a semiconductor substrate; and

a pair of comb-like electrodes both formed on the semiconductor substrate and horizontally arranged thereon,

at least one of the pair of comb-like electrodes including a cutting target portion.