Chemical sensor using chemically induced electron-hole production at a schottky barrier

• US 6,903,433 B1
• Filed: 01/19/2000
• Issued: 06/07/2005
• Est. Priority Date: 01/19/2000
• Status: Expired due to Fees

• Current Assignee: Adrena Incorporated
• Original Assignee: Adrena Incorporated
• Inventors: McFarland, Eric W., Gergen, Brian, Mujumdar, Arunava, Weinberg, Henry W., Nienhaus, Hermann, Bergh, Howard S.
• Primary Examiner(s): Mai, Son L.
• Assistant Examiner(s): TRAN, MAI HUONG C
• Application Number:
  US10/170,000
• Time in Patent Office: 1,966 Days
• Field of Search: 257/40, 257/184, 257/194, 257/253, 257/414, 204/153.1
• US Class Current: 257/471
• CPC Class Codes: G01N 27/129 Diode type sensors, e.g. gas sensitive Schottky diodes capacitor type sensors G01N27/227; field-effect transistor type sensors G01N27/414
• CPC Class Codes: H01L 27/0814 Diodes only

Abstract

Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solide state chemical sensors. Detection of the following chemical species was established: hydrogen, deuterium, carbon monoxide, molecular oxygen. The detector (1b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

Claims

1. An apparatus comprising:

a metal-semiconductor Schottky diode, characterized by an ultrathin metal film being less than 100 Angstroms thick located on a portion of a silicon substrate which together form a Schottky barrier that has current-voltage characteristics of a diode which enables detection of a surface adsorbate on said ultrathin metal film, wherein the presence of said surface adsorbate creates a measurable current due to production of electrons or holes that have sufficient energy to transverse said ultrathin metal film and cross said Schottky barrier; and

at least one zero force electrical contact, each zero force contact includes a metalized contact connected to said ultrathin metal film where the metalized contact is deposited on an oxide layer on top of said silicon substrate and said ultrathin metal has a portion of which is deposited on top of an inclination in the oxide layer before being connected to the metalized contact.

2. The apparatus of claim 1 wherein each metalized contact is deposited using a photolithographic technique in an ultrahigh vacuum chamber (p≅

10<sup>−

8</sup> Pa).

3. The apparatus of claim 1 wherein an oxide layer is etched from between two of said zero force electrical contacts to expose a portion of said silicon substrate which is wet chemically treated before said ultrathin metal film is deposited thereon.

4. The apparatus of claim 3 wherein said ultrathin metal is deposited by e-beam evaporation under vacuum conditions onto said silicon substrate.

5. The apparatus of claim 1 wherein said silicon substrate is microfabricated on a n-or p-doped semiconductor wafer.

6. The apparatus of claim 5 wherein said n-doped semiconductor wafer has ρ

_n=5-10 Ω

cm, and wherein said p-doped semiconductor wafer has ρ

_p=1-20 Ω

cm, and said silicon substrate is (111) silicon.

7. The apparatus of claim 1 further comprising a back ohmic contact formed by means of As⁺ and B⁺ ion implantation onto an oxide layer on a side of said silicon substrate opposite said zero force electrical contacts.

8. The apparatus of claim 1 wherein said ultrathin metal film is comprised of copper deposited at substrate temperatures of 135°

K.

9. The apparatus of claim 1 wherein said ultrathin metal film is comprised of silver deposited at substrate temperatures of 135°

K.

10. The apparatus of claim 1 wherein said ultrathin metal film is comprised of iron.

11. A sensor comprising:

a semiconductor;

a metal film, less than 100 Angstroms thick, deposited on a top portion of said semiconductor wherein an interface between said metal film and the top portion of said semiconductor forms a Schottky Barrier;

at least one metal pad formed on at least one oxide layer located on top of said semiconductor;

said metal film connected to said at least one metal pad; and

a back ohmic contact formed on an oxide layer located on a bottom of said semiconductor.

12. The sensor of claim 11, wherein said metal film is deposited on at least one inclination in the at least one oxide layer of said semiconducter before being connected to said at least one metal pad.

13. The sensor of claim 11, further comprising a catalyst layer located on top of said metal film.

14. The sensor of claim 11, further comprising an array of different metal films located on an array of different semiconductors.

15. The sensor of claim 11, wherein said sensor is used to detect a chemical located on top of said metal film adjacent to said semiconductor.

16. The sensor of claim 11, wherein said sensor is used to detect a chemical reaction on top of said metal film adjacent to said semiconductor.

17. The sensor of claim 11 wherein said sensor is used to detect a chemical or chemical reaction on top of said metal film adjacent to said semiconductor wherein the presence of the chemical or chemical reaction causes a chemically induced electron-hole production at the Schottky Barrier that creates a measurable chemicurrent.

18. The sensor of claim 11, wherein said sensor uses non-adiabatic energy dissipation during adsorption to detect the presence of a chemical or a chemical reaction on top of said metal film adjacent to said semiconductor.