Power semiconductor device

• US 6,903,457 B2
• Filed: 03/18/2003
• Issued: 06/07/2005
• Est. Priority Date: 11/13/2002
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Sasaki, Taishi, Kimura, Toru, Nakajima, Dai
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): MANDALA, VICTOR A
• Application Number:
  US10/389,954
• Publication Number:
  US 20040089931A1
• Time in Patent Office: 812 Days
• Field of Search: 257/684, 257/685, 257/701, 257/706, 257/712, 257/713, 257/718, 257/717, 257/723, 257/724, 257/787, 257/796, 257/788
• US Class Current: 257/717
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/4334 Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A small-sized, light-weight, low-cost power semiconductor device with excellent productivity and vibration resistance is obtained. A mold resin casing (1) is made of a thermosetting resin, such as epoxy resin, and has a top surface (1T) and a bottom surface (1B). A through hole (2) is formed in a non-peripheral portion (in this example, approximately in the center) of the mold resin casing (1) to pass through between the top surface (1T) and the bottom surface (1B). Electrodes (3N, 3P, 4a, 4b) have their first ends projected from sides of the mold resin casing (1). The bottom surface (5B) of a heat spreader (5) is exposed in the bottom surface (1B) of the mold resin casing (1). The heat spreader (5) has an opening (6) formed around the through hole (2).

Claims

1. A power semiconductor device comprising:

a heat spreader having a first main surface and a second main surface that are opposite to each other;

a power semiconductor element provided on said first main surface;

a mold resin casing having one main surface that is placed in a same plane with said second main surface and an other main surface that is placed opposite to said one main surface, said mold resin casing covering said heat spreader and said power semiconductor element and exposing said second main surface; and

at least one through hole formed in a non-peripheral portion of said mold resin casing, said at least one through hole passing through between said one main surface and said other main surface while avoiding said power semiconductor element and said heat spreader.

2. The power semiconductor device according to claim 1, further comprising:

a heat radiating fin that is in contact with said second main surface;

a pressing plate that is in contact with said other main surface; and

a bolt inserted in said through hole, for fixing said heat radiating fin and said pressing plate with said mold resin casing interposed therebetween.

3. The power semiconductor device according to claim 1, wherein said mold resin casing is curved in such a way that a central portion of said other main surface protrudes relative to its peripheral portion.

4. The power semiconductor device according to claim 1, wherein the degree of curing shrinkage or molding shrinkage of material of said mold resin casing is smaller than the degree of thermal shrinkage of material of said heat spreader.

5. The power semiconductor device according to claim 1, further comprising:

a heat radiating fin that is in contact with said second main surface; and

a bolt inserted in said through hole, for fixing said mold resin casing and said heat radiating fin.

6. The power semiconductor device according to claim 1, wherein the degree of curing shrinkage or molding shrinkage of material of said mold resin casing is larger than the degree of thermal shrinkage of material of said heat spreader.

7. The power semiconductor device according to claim 6, wherein the coefficient of linear expansion of the material of said mold resin casing is smaller than the coefficient of linear expansion of the material of said heat spreader.

8. The power semiconductor device according to claim 1, wherein said heat spreader has an opening formed around said through hole.

9. The power semiconductor device according to claim 8, wherein a recess is formed in said other main surface in correspondence with said opening.

10. The power semiconductor device according to claim 9, wherein said recess is approximately U-shaped in cross-section.

11. The power semiconductor device according to claim 1, wherein said heat spreader includes a plurality of heat spreaders and said plurality of heat spreaders are arranged approximately symmetrically around said through hole.

12. The power semiconductor device according to claim 11, wherein said other main surface has a groove-like recess formed in correspondence with a gap between said heat spreaders.

13. The power semiconductor device according to claim 12, wherein said recess is approximately U-shaped in cross-section.

14. A power semiconductor device comprising:

a heat spreader having a first main surface and a second main surface that are opposite to each other;

a power semiconductor element provided on said first main surface;

a mold resin casing havina one main surface that is placed in a same plane with said second main surface and an other main surface that is placed opposite to said one main surface, said mold resin casing covering said heat spreader and said power semiconductor element and exposing said second main surface; and

at least one through hole formed in a non-peripheral portion of said mold resin casing, said at least one through hole passing through between said one main surface and said other main surface while avoiding said power semiconductor element and said heat spreader, wherein

said mold resin casing is curved in such a way that a central portion of said one main surface protrudes relative to its peripheral portion.