High frequency semiconductor device
First Claim
1. A high frequency HF semiconductor device comprising:
- a semiconductor substrate;
an electroconductor layer provided on the semiconductor substrate;
a first insulator layer for electrically insulating the electroconductor layer from the semiconductor substrate;
N pieces of wires which are provided on the semiconductor substrate, each of said N pieces of wires having one of N-phase signals coupled thereto where N represents a positive integer equal to or greater than 2;
a second insulator layer for electrically insulating the wires from the electroconductor layer and the semiconductor substrate;
wherein N1 pieces of the wires are provided on one side of the electroconductor layer where N1 represents 0 or a positive integer equaling or less than N and N2 pieces of the wires are provided on the other side of the electroconductor layer where N2 represents 0 or a positive integer satisfying N1 N2=N.
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Accused Products
Abstract
A high frequency (HF) semiconductor device includes a semiconductor substrate. An electroconductor layer is provided on the semiconductor substrate. A first insulator layer electrically insulates the electroconductor layer from the semiconductor substrate. N pieces of wires are provided on the semiconductor substrate, and N-phase signals (where N represents a positive integer greater than 2) are fed to the wires. A second insulator layer electrically insulates the wires from the electroconductor layer and the semiconductor substrate. N1 pieces of the wires are provided on one side of the electroconductor layer (where N1 represents 0 or a positive integer equaling or less than N). N2 pieces of the wires are provided on the other side of the electroconductor layer (where N2 represents 0 or a positive integer satisfying N1 N2=N).
46 Citations
34 Claims
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1. A high frequency HF semiconductor device comprising:
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a semiconductor substrate;
an electroconductor layer provided on the semiconductor substrate;
a first insulator layer for electrically insulating the electroconductor layer from the semiconductor substrate;
N pieces of wires which are provided on the semiconductor substrate, each of said N pieces of wires having one of N-phase signals coupled thereto where N represents a positive integer equal to or greater than 2;
a second insulator layer for electrically insulating the wires from the electroconductor layer and the semiconductor substrate;
wherein N1 pieces of the wires are provided on one side of the electroconductor layer where N1 represents 0 or a positive integer equaling or less than N and N2 pieces of the wires are provided on the other side of the electroconductor layer where N2 represents 0 or a positive integer satisfying N1 N2=N. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 33, 34)
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17. An HF semiconductor device comprising:
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a semiconductor substrate;
an electroconductor layer provided on the semiconductor substrate;
a first insulator layer for electrically insulating the electroconductor layer from the semiconductor substrate;
a spiral wire provided on the semiconductor substrate opposite to the electroconductor layer;
a second insulator layer for electrically insulating the spiral wire from the electroconductor layer and the semiconductor substrate;
an HF-signal isolating section provided between the electroconductor layer and a ground potential to isolate an HF component flowing between the electroconductor layer and the ground potential; and
wherein cutouts are provided in positions of the electroconductor layer opposite to the spiral wire, and the cutouts are provided to radially extend from a position opposite to the spiral wire as a center. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. An HF semiconductor device comprising:
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a semiconductor substrate;
a first insulator layer provided on the semiconductor substrate;
an electroconductor layer provided on the first insulator layer;
a second insulator layer provided on the electroconductor layer;
a first wire provided on the second insulator layer opposite to the electroconductor layer;
a dielectric layer provided on the first wire;
a second wire provided on the dielectric layer opposite to the first wire; and
an HF-signal isolating section provided between the electroconductor layer and a ground to isolate an HF component flowing between the electroconductor layer and the ground. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification