Inductor device having improved quality factor

• US 6,903,644 B2
• Filed: 07/28/2003
• Issued: 06/07/2005
• Est. Priority Date: 07/28/2003
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lin, Chih-Hsien, Wang, Sung-Hsiung, Chao, Chih-Ping, Hsu, Heng-Ming, Chen, Shuo-Mao, Kuan, Jui-Feng
• Primary Examiner(s): MAI, ANH T
• Application Number:
  US10/628,150
• Publication Number:
  US 20050024176A1
• Time in Patent Office: 680 Days
• Field of Search: 336/200, 336/223, 336/232, 296/021
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/008 Electric or magnetic shielding of printed inductances
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An inductor device including a first coil conductor (310) and a second coil conductor (510), the first coil conductor (310) being located over a substrate (120) and having a first pattern and a first conductivity, and the second coil conductor (510) being located on a substantial portion of the first coil conductor (310), having a second pattern substantially conforming to the first pattern, and having a second conductivity substantially greater than the first conductivity.

Claims

1. An inductor device, comprising:

a first coil conductor located over a substrate and having a first conductivity and a first pattern; and

a second coil conductor located on a substantial portion of said first coil conductor, having a second conductivity substantially greater than said first conductivity, and having a second pattern substantially conforming to said first pattern.

2. The inductor device as recited in claim 1 wherein said first coil conductor comprises one selected from the group consisting of:

a non-magnetic metal;

a non-magnetic metal alloy;

a magnetic metal;

a magnetic metal alloy;

doped polysilicon; and

a polycide conductor material.

3. The inductor device as recited in claim 1 wherein said second coil conductor comprises aluminum.

4. The inductor device as recited in claim 1 wherein said second coil conductor comprises an aluminum alloy.

5. The inductor device as recited in claim 1 further comprising a patterned passivation layer located over said first coil conductor and having at least one opening exposing at least a portion of said first coil conductor, wherein said second coil conductor contacts said first coil conductor in said at least one opening.

6. The inductor device as recited in claim 1 further comprising:

a parallel coil separated from said first coil conductor by an insulator layer and having a third pattern substantially conforming to said first pattern; and

a via extending through said insulator layer and connecting said first coil conductor and said parallel coil.

7. The inductor device as recited in claim 1 wherein said first pattern is a spiral pattern having a shape selected from the group consisting of:

a square;

a rectangle; and

an octagon.

8. The inductor device as recited in claim 1 wherein said second coil conductor has a thickness of about 12,000 angstroms.

9. The inductor device as recited in claim 1 wherein said inductor device has a series resistance that is less than about 0.3 Ω

.

10. The inductor device as recited in claim 1 wherein said inductor device has a quality factor of at least about 20.

11. A method of manufacturing an inductor device, comprising:

forming a first coil conductor over a substrate, said first coil conductor having a first conductivity and a first pattern; and

forming a second coil conductor on a substantial portion of said first coil conductor, said second coil conductor having a second conductivity substantially greater than said first conductivity and having a second pattern substantially conforming to said first pattern.

12. The method as recited in claim 11 wherein said first coil conductor comprises one selected from the group consisting of:

a non-magnetic metal;

a non-magnetic metal alloy;

a magnetic metal;

a magnetic metal alloy;

doped polysilicon; and

a polycide conductor material.

13. The method as recited in claim 11 wherein said second coil conductor comprises aluminum.

14. The method as recited in claim 11 wherein said second coil conductor comprises an aluminum alloy.

15. The method as recited in claim 11 further comprising forming a patterned passivation layer over said first coil conductor, said patterned passivation layer having at least one opening exposing at least a portion of said first coil conductor, wherein said second coil conductor contacts said first coil conductor in said at least one opening.

16. The method as recited in claim 11 further comprising:

forming a parallel coil having a third pattern substantially conforming to said first pattern;

forming an insulator layer over said parallel coil, wherein said insulator layer interposes said first coil conductor and said parallel coil; and

forming a via extending through said insulator layer and connecting said first coil conductor and said parallel coil.

17. The method as recited in claim 11 wherein said first pattern is a spiral pattern having a shape selected from the group consisting of:

a square;

a rectangle; and

an octagon.

18. The method as recited in claim 11 wherein said second coil conductor has a thickness of about 12,000 angstroms.

19. The method as recited in claim 11 wherein said second coil conductor has a thickness selected to provide a resistance equivalent to about 8,400 angstroms thick copper.

20. The method as recited in claim 11 wherein said forming said second coil conductor includes depositing and etching a metal layer.

21. An integrated circuit device, comprising:

a substrate;

an inductor device, including

a first coil conductor located over said substrate and having a first conductivity and a first pattern, and

a second coil conductor located on a substantial portion of said first coil conductor, having a second conductivity substantially greater than said first conductivity, and having a second pattern substantially conforming to said first pattern;

an active device located in said substrate; and

interconnects coupling said active device and said inductor device.

22. The integrated circuit device as recited in claim 21 wherein said first coil conductor comprises one selected from the group consisting of:

a non-magnetic metal;

a non-magnetic metal alloy;

a magnetic metal;

a magnetic metal alloy;

doped polysilicon; and

a polycide conductor material.

23. The integrated circuit device as recited in claim 21 wherein said second coil conductor comprises aluminum.

24. The integrated circuit device as recited in claim 21 wherein said second coil conductor comprises an aluminum alloy.

25. The integrated circuit device as recited in claim 21 wherein said inductor device further includes a patterned passivation layer located over said first coil conductor and having at least one opening exposing at least a portion of said first coil conductor, wherein said second coil conductor contacts said first coil conductor in said at least one opening.

26. The integrated circuit device as recited in claim 21 wherein said inductor device further includes:

a parallel coil separated from said first coil conductor by an insulator layer and having a third pattern substantially conforming to said first pattern; and

a via extending through said insulator layer and connecting said first coil conductor and said parallel coil.

27. The integrated circuit device as recited in claim 21 wherein said first pattern is a spiral pattern having a shape selected from the group consisting of:

a square;

a rectangle; and

an octagon.

28. The integrated circuit device as recited in claim 21 wherein said second coil conductor has a thickness of about 12,000 angstroms.

29. The integrated circuit device as recited in claim 21 wherein said inductor device has a series resistance that is less than about 0.3 Ω

.

30. The integrated circuit device as recited in claim 21 wherein said inductor device has a quality factor of at least about 20.

31. An inductor device comprising:

a substrate;

a first metal layer comprising

a first conductor formed in a closed pattern on said substrate, and

a first metal interconnect feature on said substrate;

a first dielectric formed atop said first conductor;

a first coil conductor formed on said first dielectric layer in a closed pattern substantially overlying said first conductor and being in electrical contact with said first conductor;

a passivation layer formed atop said first coil conductor; and

a second coil conductor formed on said passivation layer in a closed pattern substantially overlying said first coil conductor and being in electrical contact with said first coil conductor.