Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure

• US 6,905,578 B1
• Filed: 04/27/1998
• Issued: 06/14/2005
• Est. Priority Date: 04/27/1998
• Status: Expired due to Fees

• Current Assignee: CVC Products, Inc. (Veeco Instruments Incorporated)
• Original Assignee: CVC Products, Inc. (Veeco Instruments Incorporated)
• Inventors: Mann, Christopher J., Paranjpe, Ajit P., Jakubik, Dwain R., Davis, Cecil J., Moslehi, Mehrdad M.
• Primary Examiner(s): McDonald, Rodney G.
• Application Number:
  US09/067,143
• Time in Patent Office: 2,605 Days
• Field of Search: 204/192.11, 204/192.12, 204/192.13, 204/192.2, 204/298.03, 204/298.04, 204/298.07, 204/298.08, 204/298.09, 204/298.11, 204/298.15, 204/298.23, 204/298.25, 204/298.26, 204/298.27, 204/298.28, 204/298.29, 204/298.12, 204/298.16, 118/719, 118/723.R, 118/723.VE
• US Class Current: 204/192.12
• CPC Class Codes: C23C 14/568 Transferring the substrates through a series of coating stations C23C14/562 takes precedence

Abstract

An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber. A monitoring and control device can be wed to optimize equipment state, process state, and wafer state parameters by sensing each respective state during or after the deposition process.

Claims

1. An apparatus for physical-vapor deposition of a multi-layer material structure onto a substrate, the material structure having plural layers deposited according to a predetermined sequence, each layer comprised of one of plural materials, the apparatus comprising:

a single, contiguous vacuum chamber;

plural targets disposed in the vacuum chamber, at least one target comprised of one of the plural materials;

at least one power source associated with the plural targets for supporting physical-vapor deposition;

a substrate support chuck disposed in the vacuum chamber for supporting the substrate;

an electromagnet coupled to the substrate support chuck, the electromagnet for formation of a magnetic field proximate to the substrate; and

a mechanical indexing mechanism that moves the substrate support chuck and electromagnet relative to the plural targets in order to align and maintain the substrate in substantial alignment with any one of the targets to deposit the multi-layer material structure of the plural materials according to the predetermined sequence;

the electromagnet moving along with the substrate support chuck such that the electromagnet may support deposition of magnetic materials onto the substrate at any of the plural targets.

2. The apparatus of claim 1 wherein said physical-vapor deposition comprises a plasma sputtering process.

3. The apparatus of claim 1 wherein said physical-vapor deposition comprises an ion-beam deposition process.

4. The apparatus of claim 1 wherein said physical-vapor deposition comprises an evaporation process.

5. The apparatus of claim 1 wherein each of said plural targets form a process station, with the plural process stations sharing said vacuum chamber.

6. The apparatus of claim 1 wherein said multi-layer material structure is a spin-valve GMR sensor.

7. The apparatus of claim 1 wherein said multi-layer material structure is an MRAM structure.

8. The apparatus of claim 1 wherein said multi-layer material structure is a periodic laminated structure.

9. The apparatus of claim 1 wherein said multi-layer material structure is a colossal MR sensor structure.

10. The apparatus of claim 1 wherein said multi-layer material structure is a semiconductor interconnect structure.

11. The apparatus of claim 5 wherein the target in any process station may be replaced with an inductively-coupled plasma source for surface cleaning of said substrate.

12. The apparatus of claim 1 wherein said plural targets comprise 3 to 6 targets.

13. The apparatus according to claim 1 wherein the targets are disposed in a target plane and the substrate support chuck is disposed in a substrate plane, the substrate plane substantially parallel to the target plane.

14. The apparatus of claim 13 wherein said target plane is located above the substrate plane with the substrate device side facing up.

15. The apparatus of claim 13 wherein said target plane is located below the substrate plane with the substrate device side facing down.

16. The apparatus according to claim 13 wherein said mechanical indexing mechanism is associated with the substrate support chuck for moving and aligning the substrate support chuck to any one of the plural targets according to the predetermined sequence.

17. The apparatus according to claim 16 wherein the mechanical indexing mechanism comprises:

a motor; and

an indexing arm coupled to the motor and the substrate support chuck, the indexing arm for rotating the substrate support chuck in the substrate plane.

18. The apparatus of claim 17 wherein said indexing arm is a radial arm connected to a central indexing axis.

19. The apparatus of claim 17 wherein said mechanical indexing mechanism comprises rotational indexing around a central axis.

20. The apparatus of claim 18 wherein said central axis corresponds to the central axis of the vacuum chamber.

21. The apparatus according to claim 17, wherein the electromagnet supports deposition of multi-layer structures comprising magnetic material layers.

22. The apparatus of claim 17 wherein said substrate support chuck comprises a heating element for heating said substrate.

23. The apparatus of claim 17 wherein said substrate support chuck comprises a cooling device for actively cooling said substrate.

24. The apparatus of claim 17 wherein said substrate support chuck comprises either a mechanical clamp or an electrostatic clamp for substrate clamping.

25. The apparatus according to claim 1 further comprising a sensor associated with the vacuum chamber for measuring deposition process state parameters.

26. The apparatus according to claim 25 wherein the sensor further comprises a real-time in-situ sensor disposed in the vacuum chamber.

27. The apparatus of claim 26 wherein said sensor is a spectral ellipsometer.

28. The apparatus according to claim 25 further comprising a vacuum metrology module associated with the vacuum chamber, the metrology module for holding at least one sensor to obtain in-vacuu post-process measurements.

29. The apparatus of claim 28 wherein said metrology module and said physical-vapor deposition apparatus are docked onto a vacuum cluster tool hub.

30. The apparatus according to claim 25 further comprising a control system associated with the sensor and with said apparatus for controlling the physical-vapor deposition process parameters.

31. The apparatus according to claim 30 wherein the control system is further associated with the power source for varying electrical power applied to the targets to perform electrical chopping.

32. The apparatus of claim 31 wherein said control system is used for sensor-based, model-based process end-point detection.

33. The apparatus according to claim 31 wherein the power source comprises a radio-frequency power source.

34. The apparatus according to claim 31 wherein the power source comprises a direct current power source.

35. The apparatus according to claim 1 further comprising an up/down actuation mechanism in conjunction with the substrate support chuck for adjusting the spacing between the targets and the substrate.

36. The apparatus according to claim 35 wherein a control system is further associated with the up/down actuation mechanism for controlling the spacing between the targets and the substrate.

37. The apparatus according to claim 1 further comprising a vacuum pump system associated with the vacuum chamber for varying the pressure and for establishing a load-pressure processing environment within the vacuum chamber.

38. The apparatus of claim 37 wherein said vacuum pump system comprises a cryo pump.

39. The apparatus of claim 37 wherein said vacuum pump system comprises a water removal pump.

40. The apparatus of claim 37 wherein said vacuum pump system comprises a turbo-molecular pump.

41. The apparatus according to claim 37 wherein a control system is further associated with the vacuum pump for controlling the pressure within the vacuum chamber.

42. The apparatus according to claim 1 further comprising a shutter associated with the vacuum chamber, the shutter operational to block deposition when inserted between the substrate support chuck and a selected target, the shutter further operational to allow deposition when removed from between the substrate support chuck and the selected target.

43. The apparatus of claim 42 wherein said shutter comprises a metallic plate with at least one large-area hole.

44. The apparatus of claim 43 wherein said hole is aligned between the substrate support chuck and the selected target to allow deposition of the target material onto the substrate.

45. The apparatus according to claim 13 further comprising:

a shutter mechanism associated with the vacuum chamber, the shutter mechanism comprising;

a shutter disposed in the vacuum chamber in a shutter plane, the shutter plane substantially parallel to and between the target plane and the substrate plane; and

a shutter indexing actuator coupled to the shutter for moving the shutter between a blocking configuration and a deposition configuration.

46. The apparatus of claim 45 wherein said shutter indexing actuator operates in a static mode to move said shutter into predetermined stationary position, with respect to said plural targets.

47. The apparatus of claim 45 wherein said shutter indexing actuator operates in a dynamic rotation mode to perform mechanical chopping of the physical-vapor deposition process.

48. The apparatus according to claim 45 wherein the plural targets are disposed in a substantially circular configuration having a central axis, the apparatus further comprising:

plural substrate support chucks disposed in the vacuum chamber along the substrate plane, the mechanical indexing mechanism operable to align each substrate support chuck with one of the plural targets; and

wherein the shutter mechanism further comprises at least one shutter disposed in at least one shutter plane about the central axis, said at least one shutter operable for rotating between a blocking configuration and a deposition configuration with respect to at least one substrate support chuck.

49. The apparatus of claim 48 wherein said at least one shutter is connected to an electrical ground potential.

50. The apparatus of claim 48 wherein the radial coordinates of the center points of said plural targets and the radial coordinates of the center points of said plural substrate support chucks are all substantially equal.

51. The apparatus of claim 48 wherein said plural substrate support chucks are coupled to plural indexing arms.

52. The apparatus of claim 51 wherein said plural indexing arms couple to a single rotational indexing mechanism at the center of said vacuum chamber.

53. The apparatus of claim 48 wherein the number of said plural targets is an integer multiplier of the number of said plural substrate support chucks, with the integer multiplier being a number between 1 and 6.

54. The apparatus according to claim 48 wherein the shutter is comprised of a stainless steel plate.

55. The apparatus of claim 48 wherein the shutter is comprised of a titanium plate.

86. The apparatus of claim 45 wherein said shutter indexing actuator operates in a dynamic oscillatory mode to perform mechanical chopping of the physical-vapor deposition process.

56. A method for physical-vapor deposition of a multi-layer material structure onto a substrate, the structure having at least a first layer comprised of a first material and a second layer comprised of a second material, the method comprising the steps of:

disposing a first stationary target in a single, contiguous vacuum chamber, the first target comprised of the first material;

disposing a second stationary target in the vacuum chamber, the second target comprised of the second material;

supporting the substrate on a substrate support chuck coupled to a mechanical indexing mechanism in the vacuum chamber;

maintaining the substrate support chuck in substantial alignment with the first stationary target with the mechanical indexing mechanism;

depositing the first material from the first stationary target onto the substrate by applying electrical power to the first target, the vacuum chamber remaining contiguous during the deposition of the first material onto the substrate;

using the mechanical indexing mechanism to move the substrate support chuck, along with an electromagnet coupled to the substrate support chuck and operable to support deposition of magnetic materials onto the substrate at any of the first or second targets, from the first stationary target to the second stationary target;

maintaining the substrate support chuck in substantial alignment with the second stationary target with the mechanical indexing mechanism;

applying a magnetic field proximate to the substrate with the electromagnet coupled to the substrate support chuck in substantial alignment with the second stationary target; and

depositing the second material from the second stationary target onto the substrate by applying electrical power to the second target, the vacuum chamber remaining contiguous during the deposition of the second material onto the substrate.

57. The method of claim 56 wherein said multi-layer material structure is a spin-valve GMR sensor, a laminated structure, a colossal MR structure, or a semiconductor interconnect structure.

58. The method according to claim 56 wherein the mechanical indexing mechanism comprises a motor coupled to an indexing arm, the indexing arm coupled to the substrate support chuck.

64. The method according to claim 56 further comprising the steps of precleaning the substrate before depositing the first material onto the substrate, the precleaning step comprising the steps of:

inserting a shutter between the first stationary target and the substrate; and

applying an electrical power to said substrate support chuck.

65. The method according to claim 56 wherein said depositing the first material further comprises providing a predetermined electrical power to the first target for a predetermined time, the power and time corresponding to a desired layer thickness and other material layer properties.

66. The method according to claim 65 wherein said depositing the first material step further comprises depositing the first material with electrical chopping through modulation of an electrical power source.

67. The method according to claim 65 wherein said depositing the first material step further comprises depositing the first material with mechanical chopping through rotation indexing modulation of a shutter.

87. The method according to claim 65 wherein said depositing the first material step further comprises depositing the first material with mechanical chopping through oscillation indexing modulation of a shutter.

59. The method according to claim 59 wherein the motor comprises an electrical stepper motor.

60. The method according to claim 59 further comprising the step of adjusting the spacing between the substrate and the first target with an up/down actuating mechanism coupled to the indexing arm and the substrate support chuck.

61. The method according to claim 60 wherein said depositing the first material step further comprises:

aligning the substrate support chuck with the first stationary target;

inserting a shutter between the first stationary target and the substrate;

initiating deposition of the first material onto the shutter by applying an electrical power to the first stationary target;

removing the shutter to provide substrate-to-target view and to allow deposition of the first material to the substrate; and

inserting the shutter between the first stationary target and the substrate to block deposition of the first material onto the substrate.

62. The method of claim 61 wherein said shutter is used to establish precision material layer thickness control by stabilizing the plasma with the shutter closed and by controlling the deposition time via the duration of opening the shutter.

63. The method according to claim 60 further comprising the steps of precleaning the first stationary target before depositing the first material onto the substrate, the precleaning step comprising the steps of:

inserting a shutter between the first stationary target and the substrate; and

depositing material from the first stationary target onto the shutter by applying an electrical power to the first target.

68. An apparatus for physical-vapor deposition of plural material layers onto a substrate, each layer comprised of one of plural materials, the apparatus comprising:

a single, contiguous vacuum chamber,

plural stationary targets disposed in the vacuum chamber, at least one target comprised of one of the plural materials;

a substrate support chuck disposed in the vacuum chamber for supporting the substrate in a deposition configuration wherein the substrate is maintained in substantial alignment with any one of the plural targets;

an electromagnet coupled to the substrate support chuck, the electromagnet for formation of a magnetic field proximate to the substrate for supporting deposition of a magnetic material layer by any of the plural targets;

an indexing arm coupled to the substrate support chuck and operable to move the substrate support chuck and electromagnet relative to the plural targets in order to align and maintain the substrate in substantial alignment with any one of the plural targets;

an electrical power source associated with the plural targets and the substrate for supporting physical-vapor deposition; and

a mechanical shutter mechanism interposed between the plural targets and the substrate support chuck, the mechanical shutter mechanism having;

a deposition configuration for each of the plural targets wherein physical-vapor deposition onto the substrate from that target is allowed; and

a blocking configuration wherein physical-vapor deposition onto the substrate from that target is prevented.

69. The apparatus of claim 68 wherein said power source operates in conjunction with a DC magnetron energy source.

70. The apparatus of claim 68 wherein said power source operates in conjunction with an RF magnetron energy source.

71. The apparatus of claim 68 wherein said power source operates in conjunction with an RF diode energy source.

72. The apparatus according to claim 68 wherein the shutter mechanism comprises:

a shield having a hole, the hole corresponding with the deposition configuration to allow deposition of the plural materials onto the substrate;

a shutter for covering the hole to block deposition of the plural materials onto the substrate and for exposing the hole to allow deposition of the plural materials; and

a shutter indexing actuator associated with the shutter for moving the shutter to cover and expose the hole.

73. The apparatus according to claim 72 wherein the shutter indexing actuator comprises an electric motor actuator.

74. The apparatus according to claim 72 wherein the actuator comprises a pneumatic actuator.

75. The apparatus according to claim 72 further comprising:

a first target comprising a first material, the first target disposed in the vacuum chamber;

a second target comprising a second material, the second target disposed in the vacuum chamber;

a mechanical indexing mechanism associated with the indexing arm coupled to the substrate support chuck, the mechanical indexing mechanism for aligning the substrate with the first target and the second target based on a pre-specified process sequence.

76. An apparatus for formation of multi-layer material structures using physical-vapor deposition of plural materials onto a substrate according to a predetermined sequence, the apparatus comprising:

a single, contiguous vacuum chamber having a central axis;

plural targets disposed in the vacuum chamber in a circular configuration about the central axis, the targets forming a target plane, the targets having the plural materials, at least one power source associated with the targets for supporting physical-vapor deposition process;

first and second substrate support chucks disposed in a substrate plane in the vacuum chamber for holding first and second substrates, the substrate plane substantially parallel to the target plane;

first and second indexing arms coupled to the first and second substrate support chucks;

an electromagnet coupled to at least one of the substrate support chucks, the electromagnet for formation of a magnetic field in the substrate plane; and

at least one indexing mechanism associated with the first and second indexing arms and substrate support chucks, the at least one indexing mechanism for rotating the first and second indexing arms, the substrate support chucks, and the electromagnet coupled to at least one of the substrate support chucks in the substrate plane to maintain each substrate support chuck in substantial alignment with one of the plural targets according to the predetermined sequence;

wherein the electromagnet may support deposition of magnetic materials onto the substrate at any of the plural targets.

77. The apparatus according to claim 76 wherein the indexing mechanism comprises:

an indexing arm disposed in the vacuum chamber, the indexing arm for rotating the first and second indexing substrate support chucks in the substrate plane, the indexing arm rotating the substrate support chucks in a circle about the central axis; and

a motor associated with the indexing arm, the motor rotating the indexing arm to align the substrate support chucks with selected targets according to the predetermined sequence.

78. The apparatus according to claim 77 wherein the motor has a zero rotation home position and wherein each target is disposed in the vacuum chamber at a predetermined position relative to the zero rotation position, the motor rotating the substrate support chucks to each predetermined target position by rotating a predetermined angular rotation associated with each target position.

79. The apparatus according to claim 76 wherein the targets are coupled to the top lid of the vacuum chamber to support physical-vapor deposition in sputter-down mode.

80. A method for depositing first and second materials from first and second targets onto a substrate to form a multi-layer structure on the substrate, the structure having a first layer comprised of the first material and a second layer comprised of the second material, the method comprising the steps of:

disposing the first and second targets in a single, contiguous vacuum chamber;

maintaining the substrate in substantial alignment with the first target in the vacuum chamber;

depositing the first material onto the substrate;

moving the substrate, along with an electromagnet associated with the substrate, with a mechanical indexing mechanism to align with the second target;

applying a magnetic field proximate to the substrate with the electromagnet disposed in the vacuum chamber, the electromagnet for supporting deposition of a magnetic material layer; and

depositing the second material onto the substrate, the vacuum chamber remaining contiguous during the deposition of the second material onto the substrate.

81. The method according to claim 80 wherein the depositing the second material step comprises the step of providing an equipment state according to a process recipe to establish a predetermined process state, the process state resulting in deposition of the material according to a predetermined wafer state.

82. The method according to claim 81 further comprising the steps of:

sensing the equipment state; and

adjusting the equipment state parameters to achieve the process recipe.

83. The method according to claim 81 further comprising the steps of:

sensing the process state; and

adjusting the equipment state parameters to achieve the predetermined process state.

84. The method according to claim 81 further comprising the steps of:

sensing the wafer state; and

adjusting the equipment state to achieve the predetermined wafer state.

85. The method according to claim 80 further comprising the steps of:

sensing the results of said depositing the first material steps;

detecting failures in said depositing the first material steps; and

canceling said depositing the second material step if a failure is detected.

88. An apparatus for physical-vapor deposition of a multi-layer material structure onto a single substrate, the material structure having plural material layers deposited according to a predetermined sequence, each layer comprised of one of plural materials, the apparatus comprising:

a single, contiguous vacuum chamber;

plural targets disposed in the vacuum chamber, at least one target comprised of one of the plural materials;

at least one power source associated with the plural targets for supporting physical-vapor deposition;

a single substrate support chuck disposed in the vacuum chamber for supporting the single substrate;

a mechanical indexing mechanism that moves the substrate relative to the plural targets and maintains the single substrate in substantial alignment with any one of the targets to deposit the multi-layer material structure of the plural materials according to the predetermined sequence; and

an electromagnet coupled to the substrate support chuck, the electromagnet for formation of a magnetic field in the substrate plane, the electromagnet moving along with the substrate relative to the plural targets such that the electromagnet may support deposition of magnetic materials onto the substrate at any of the plural targets.

89. The apparatus of claim 88, further comprising the vacuum chamber remaining contiguous during the deposition of each of the plural material layers onto the substrate.

90. The apparatus of claim 88, further comprising an up/down actuation mechanism in conjunction with the substrate support chuck for adjusting the spacing between the targets and the substrate.

91. The apparatus of claim 88, further comprising a shutter associated with the vacuum chamber, the shutter operational to block deposition when inserted between the substrate support chuck and a selected target, the shutter further operational to allow deposition when removed from between the substrate support chuck and the selected target.

92. A method for physical-vapor deposition of a multi-layer material structure onto a single substrate, the structure having at least a first layer comprised of a first material and a second layer comprised of a second material, the method comprising the steps of:

disposing a first stationary target in a single, contiguous vacuum chamber, the first target comprised of the first material;

disposing a second stationary target in the vacuum chamber, the second target comprised of the second material;

supporting the single substrate on a single substrate support chuck coupled to a mechanical indexing mechanism in the vacuum chamber;

maintaining the single substrate support chuck in substantial alignment with the first stationary target with the mechanical indexing mechanism;

depositing the first material from the first stationary target onto the single substrate by applying electrical power to the first target;

using the mechanical indexing mechanism to move the substrate support chuck, along with an electromagnet coupled to the substrate support chuck, from the first stationary target to the second stationary target;

maintaining the single substrate support chuck in substantial alignment with the second stationary target with the mechanical indexing mechanism;

applying a magnetic field proximate to the single substrate with the electromagnet coupled to the substrate support chuck in substantial alignment with the second stationary target, and

depositing the second material from the second stationary target onto the single substrate by applying electrical power to the second target.

93. The method of claim 92, further comprising the vacuum chamber remaining contiguous during the deposition of each of the first and second material layers onto the substrate.

94. The method of claim 92, further comprising the step of adjusting the spacing between the substrate and the first target with an up/down actuating mechanism coupled to the indexing mechanism and the single substrate support chuck.

95. The method of claim 92, wherein said depositing the first material step further comprises:

aligning the single substrate support chuck with the first stationary target;

inserting a shutter between the first stationary target and the single substrate;

initiating deposition of the first material onto the shutter by applying an electrical power to the first stationary target;

removing the shutter to provide substrate-to-target view and to allow deposition of the first material to the single substrate; and

inserting the shutter between the first stationary target and the single substrate to block deposition of the first material onto the single substrate.