Method of releasing devices from a substrate
First Claim
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1. A method of releasing devices formed in a silicon layer over a stop layer without stiction comprising:
- a) anisotropically etching features in a masked silicon layer down to the stop layer;
b) overetching the features to form a notch at the silicon-stop layer interface;
c) depositing a fluorine-containing polymer over the sidewalls and bottom of the etched features; and
d) isotropically etching to widen the notch until the etched feature becomes separated from the stop layer.
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Abstract
Micro devices are formed in situ in a high density in a substrate comprising a masked silicon layer over a stop layer of a silicon compound, by anisotropically etching the desired feature in the silicon layer, overetching to form a notch at the silicon-stop layer interface, depositing a protective fluorocarbon polymer layer on the sidewalls and bottom of the etched silicon layer, and isotropically etching to separate the etched feature from the stop layer. This method avoids the problems of stiction common in other methods of forming micro devices.
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Citations
9 Claims
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1. A method of releasing devices formed in a silicon layer over a stop layer without stiction comprising:
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a) anisotropically etching features in a masked silicon layer down to the stop layer;
b) overetching the features to form a notch at the silicon-stop layer interface;
c) depositing a fluorine-containing polymer over the sidewalls and bottom of the etched features; and
d) isotropically etching to widen the notch until the etched feature becomes separated from the stop layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification