Method for preventing the etch transfer of sidelobes in contact hole patterns

• US 6,905,621 B2
• Filed: 10/10/2002
• Issued: 06/14/2005
• Est. Priority Date: 10/10/2002
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Ho, Bang-Chein, Chen, Jian-Hong
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US10/268,586
• Publication Number:
  US 20040069745A1
• Time in Patent Office: 978 Days
• Field of Search: 216/17, 216/18, 216/41, 216/47, 216/67, 438/706, 438/725, 430/5, 430/322, 430/323
• US Class Current: 216/47
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: H01L 21/0274 Photolithographic processes

Abstract

A method is provided for removing sidelobes that are formed when patterning a positive photoresist layer with an Att. PSM, Alt. PSM or a binary mask with scattering bars. A water soluble negative tone photoresist is coated over the positive photoresist pattern and is exposed through a mask having small islands that correspond in shape, size and location to the small holes in the mask used to pattern the positive tone photoresist. After development, exposed negative tone photoresist covers sidelobes formed by the positive tone process. The negative tone photoresist functions as a mask for a subsequent etch transfer of the positive tone pattern into the substrate. A method of aligning openings in a positive tone pattern over the same openings in a negative tone pattern is also useful in preventing sidelobes in the positive tone photoresist from being transferred into the substrate.

Claims

1. A method for manufacturing a microelectronic structure comprising:

providing a substrate having a positive tone photoresist layer formed thereon;

patterning said positive tone photoresist layer with a first patterned mask to form first holes or spaces penetrating said positive tone photoresist layer and an unwanted sidelobe therein;

coating a negative tone photoresist layer on said positive tone photoresist layer to fill the sidelobe;

patterning said negative tone photoresist layer with a second patterned mask to form second holes or spaces that are aligned above said first holes or spaces in said positive tone photoresist layer; and

transferring said first holes or spaces into said substrate.

2. The method of claim 1 wherein said positive tone photoresist layer is exposed with one or more wavelengths selected from a range of about 10 nm to about 600 nm.

3. The method of claim 1 wherein said first patterned mask is the same type as said second patterned mask and is selected from a group including attenuated phase shift masks (Att. PSM), alternating phase shift mask (Alt. PSM), and binary masks with scattering bars.

4. The method of claim 1 wherein said positive tone photoresist layer comprises a chemically amplified composition that requires a post exposure bake prior to development.

5. The method of claim 1 wherein said positive tone photoresist layer has a thickness between about 1000 to 10000 Angstroms.

6. The method of claim 1 wherein said positive tone photoresist layer is the top layer in a single layer, bilayer, or trilayer lithography scheme.

7. The method of claim 1 further comprised of an anti-reflective coating (ARC) that is formed on said substrate prior to coating said positive tone photoresist layer.

8. The method of claim 7 wherein the thickness of said ARC is between about 300 and 1000 Angstroms.

9. The method of claim 1 wherein said negative tone photoresist layer does not mix with said positive tone photoresist layer.

10. The method of claim 1 wherein said negative tone photoresist layer fills first holes and spaces in said positive tone photoresist layer and forms a thickness of from about 300 to 10000 Angstroms above said positive tone photoresist layer.

11. The method of claim 1 wherein said negative tone photoresist layer is exposed with one or more wavelengths of radiation in a range of about 10 nm to about 600 nm.

12. The method of claim 1 wherein said negative tone photoresist layer is comprised of a poly(vinylacetal), ethylene urea, a photoacid generator, water, and a quencher.

13. The method of claim 12 wherein said negative tone photoresist layer is developed with water or a water/isopropanol mixture.

14. The method of claim 1 wherein said second holes or spaces in said negative tone photoresist layer are wider than the first holes and spaces in said positive tone photoresist layer and expose the entire opening of said first holes or spaces in said positive tone photoresist layer.

15. The method of claim 7 wherein a first plasma etch step is used to transfer said first holes or spaces through said ARC layer and a second plasma etch step is used to transfer said first holes or spaces into said substrate.

16. The method of claim 11 wherein the one or more wavelengths used to expose said negative tone photoresist layer are the same or longer than the one or more wavelengths used to expose said positive tone photoresist layer.

29. The method of claim 15 wherein a sidelobe is formed in said positive tone photoresist layer and located directly above said negative tone photoresist layer.

17. A method for manufacturing a microelectronic structure comprising:

providing a substrate having a negative tone photoresist layer formed thereon;

patterning said negative tone photoresist layer with a first patterned mask to form first holes or spaces penetrating said negative tone photoresist layer;

thoroughly coating a positive tone photoresist layer on said negative tone photoresist layer to fill said first holes or spaces in said negative tone photoresist layer;

patterning said positive tone photoresist layer with a second patterned mask to remove a portion of said positive tone photoresist layer within said first holes or spaces and form second holes or spaces that are aligned above said first holes or spaces in said negative tone photoresist layer; and

transferring said first holes or spaces into said substrate.

18. The method of claim 17 wherein said negative tone photoresist layer is exposed with one or more wavelengths selected from a range of about 10 nm to about 600 nm.

19. The method of claim 17 wherein said first patterned mask is the same type as said second patterned mask and is selected from a group including attenuated phase shift masks (Att. PSM), alternating phase shift mask (Alt. PSM), and binary masks with scattering bars.

20. The method of claim 17 wherein said negative tone photoresist layer comprises a chemically amplified composition that requires a post exposure bake prior to development.

21. The method of claim 17 wherein said negative tone photoresist layer forms a crosslinked layer after the patterning step which is immiscible with said positive tone photoresist layer.

22. The method of claim 17 wherein the thickness of said negative tone photoresist layer is between about 1000 to 10000 Angstroms.

23. The method of claim 17 wherein said negative tone photoresist layer is the top layer in a single layer, bilayer, or trilayer lithography scheme.

24. The method of claim 17 further comprised of an anti-reflective coating (ARC) that is formed on said substrate prior to coating said negative tone photoresist layer.

25. The method of claim 24 wherein said ARC layer has a thickness between about 300 and 1000 Angstroms.

26. The method of claim 17 wherein said positive tone photoresist layer forms a thickness of from about 300 to 10000 Angstroms above said negative photoresist layer.

27. The method of claim 17 wherein said positive tone photoresist layer is exposed with one or more wavelengths of radiation in a range of about 10 nm to about 600 nm.

28. The method of claim 17 wherein said second holes or spaces in said positive tone photoresist layer are about equivalent in width to said first holes or spaces in said negative tone photoresist layer and expose the entire opening of said first holes or spaces in said negative tone photoresist layer.

30. The method of claim 24 wherein a first plasma etch step is used to transfer said first holes or spaces through said ARC layer and a second plasma etch step is used to transfer said first holes or spaces into said substrate.

31. The method of claim 27 wherein the one or more wavelengths used to expose said positive tone photoresist layer are the same as the one or more wavelengths used to expose said negative tone photoresist layer.

32. A method of forming openings on a substrate, comprising:

forming a first photoresist layer on the substrate, wherein the first photoresist layer comprises first holes exposing the substrate;

thoroughly forming a second photoresist layer on the first photoresist layer to fill the first holes, wherein a material of the first photoresist layer is different from a material of the second photoresist layer;

patterning the second photoresist layer to remove a portion of the first photoresist layer within the first holes and form second-holes aligned above the first holes; and

transferring the first holes into the substrate.

33. The method of claim 32, wherein the first photoresist layer further comprises a sidelobe and the sidelobe is filled with the second photoresist layer such that the sidelobe is not transferred into the substrate.

34. The method of claim 33, wherein the first photoresist layer comprises a positive photoresist material and the second photoresist layer comprises a negative photoresist material.

35. The method of claim 32, further comprising forming a sidelobe in the second photoresist layer, wherein the sidelobe is located directly above the first photoresist layer such that the sidelobe is not transferred into the substrate.

36. The method of claim 35, wherein the first photoresist layer comprises a negative photoresist material and the second photoresist layer comprises a positive photoresist material.