Interferometric endpoint detection in a substrate etching process

• US 6,905,624 B2
• Filed: 07/07/2003
• Issued: 06/14/2005
• Est. Priority Date: 07/07/2003
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Frum, Coriolan I., Shan, Hongqing, Sui, Zhifeng
• Primary Examiner(s): Goudreau, George A.
• Application Number:
  US10/615,159
• Publication Number:
  US 20050006341A1
• Time in Patent Office: 708 Days
• Field of Search: 216/60, 216/67, 438/9, 438/16, 438/714, 156/345.25, 156/345.43
• US Class Current: 216/60
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

A method of etching a substrate includes placing a substrate in a process zone. The substrate has a material with a thickness, and the material has exposed regions between features of a patterned mask. An etchant gas is introduced into the process zone. The etchant gas is energized to etch the material. An endpoint of etching the material of the substrate is determined by (i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and (ii) detecting the reflected light beam to determine an endpoint of the substrate etching process. Additionally, the wavelength of the light beam can be selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.

Claims

1. A method of etching a substrate, the method comprising:

(a) placing a substrate in a process zone, the substrate comprising a material having a thickness;

(b) introducing an etchant gas into the process zone;

(c) energizing the etchant gas to etch the material; and

(d) determining an endpoint of etching the material by

(i) reflecting a light beam from the substrate, the light beam having a wavelength selected to have a coherence length in the substrate of from about 1.5 to about 4 times the thickness of the material, and

(ii) detecting the reflected light beam to determine an endpoint of the substrate etching process.

2. A method according to claim 1 further comprising selecting the wavelength to have a coherence length in the substrate of from about 2 to about 3 times the thickness of the material.

3. A method according to claim 1 comprising selecting the wavelength according to the approximate proportionality:

coherence length α

λ

²/Δ

λ

, where λ

is the wavelength and Δ

λ

is the bandwidth of wavelengths in the light beam.

4. A method according to claim 1 wherein the material comprises exposed regions between features of a patterned mask, and further comprising selecting the wavelength to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material.

5. A method according to claim 1 comprising selecting the wavelength to be less than about 240 nm.

6. A method according to claim 5 comprising selecting the wavelength to be from about 150 to about 220 nm.

7. A method of etching a substrate, the method comprising:

(a) placing a substrate in a process zone, the substrate comprising a material with exposed regions between features of a patterned mask;

(b) introducing an etchant gas into the process zone;

(c) energizing the etchant gas to etch the material; and

(d) determining an endpoint of etching the material by

(i) reflecting a light beam from the substrate, the light beam having a wavelength selected to maximize an absorption differential that is a difference between the absorption of the light beam in the patterned mask and the absorption of the light beam in the material, and

(ii) detecting the reflected light beam to determine an endpoint of the substrate etching process.

8. A method according to claim 7 wherein the patterned mask has an absorption coefficient and a thickness, and comprising selecting the wavelength according to the absorption coefficient and thickness of the mask to maximize the absorption differential.

9. A method according to claim 7 comprising selecting the wavelength to be less than about 240 nm.

10. A method according to claim 9 comprising selecting the wavelength to be from about 160 to about 220 nm.

11. A method according to claim 7 further comprising selecting the wavelength to have a coherence length in the substrate of from about 1.5 to about 4 times a thickness of the material.