Semiconductor device and method of fabricating the same
First Claim
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1. A semiconductor device comprising:
- a semiconductor IC chip comprising a plurality of electrode pads, said pads each having a side;
an insulating layer located on a surface of the semiconductor IC chip, on a surface of each of the electrode pads;
a connecting terminal on an outer surface of the insulating layer; and
a conductive post extending through the insulating layer and connecting the electrode pad of the semiconductor IC chip to the connecting terminal;
wherein the insulating layer comprises an insulating elastic material and the conductive post comprises a conductive elastic material.
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Abstract
A semiconductor device comprises a semiconductor IC chip provided with electrode pads, and an insulating layer formed on a surface of the semiconductor IC chip, on the side of the electrode pads. Connecting terminals on the outer surface of the insulating layer and the electrode pads are connected by conductive posts. The insulating layer is formed of an insulating elastic material, and the conductive posts are formed of a conductive elastic material.
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Citations
11 Claims
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1. A semiconductor device comprising:
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a semiconductor IC chip comprising a plurality of electrode pads, said pads each having a side;
an insulating layer located on a surface of the semiconductor IC chip, on a surface of each of the electrode pads;
a connecting terminal on an outer surface of the insulating layer; and
a conductive post extending through the insulating layer and connecting the electrode pad of the semiconductor IC chip to the connecting terminal;
wherein the insulating layer comprises an insulating elastic material and the conductive post comprises a conductive elastic material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification