FET amplifier with temperature-compensating circuit
First Claim
1. A FET amplifier, using a FET as its amplifying element, provided with a temperature-compensating circuit for subjecting the gate voltage of said FET element to temperature compensation, wherein:
- the source of said FET is grounded, and said temperature-compensating circuit compensates said gate voltage so as to keep the drain current of said FET element constant at a prescribed amperage against variations in ambient temperature, wherein;
the prescribed amperage of said drain current is an amperage at which third order cross modulation distortion in the output power of said FET amplifier is minimized.
1 Assignment
0 Petitions
Accused Products
Abstract
A FET amplifier which minimizes the worsening of the distortion-susceptibility due to variations in the ambient temperature of operation is to be provided. An LDMOS FET 1, whose source terminal is grounded and to which are applied a gate voltage Vgs from a gate bias terminal 3 via a temperature-compensating circuit 2 and a choke coil and a drain voltage Vds from a drain bias terminal 4 via a choke coil operates as a source-grounded type amplifier. In the temperature compensating circuit 2, the resistances of fixed resistance elements 21 and 22 connected in parallel are set to be the same or have the same number of digits, and those of thermosensitive resistance elements (thermistors) 23 and 24 are set to be a combination of a value greater by one digit and a value smaller by one digit than that of the fixed resistance element 21 or the fixed resistance element 22 at the standard level (+25° C.) in the ambient temperature range of operation.
-
Citations
7 Claims
-
1. A FET amplifier, using a FET as its amplifying element, provided with a temperature-compensating circuit for subjecting the gate voltage of said FET element to temperature compensation, wherein:
-
the source of said FET is grounded, and said temperature-compensating circuit compensates said gate voltage so as to keep the drain current of said FET element constant at a prescribed amperage against variations in ambient temperature, wherein;
the prescribed amperage of said drain current is an amperage at which third order cross modulation distortion in the output power of said FET amplifier is minimized. - View Dependent Claims (5)
-
-
2. A FET amplifier, using a FET as its amplifying element, provided with a temperature-compensating circuit for subjecting the gate voltage of said FET element to temperature compensation, wherein:
said temperature-compensating circuit compensates said gate voltage so as to keep the drain current of said FET element constant at a prescribed amperage against variations in ambient temperature, wherein;
said temperature-compensating circuit is provided with;
a resistance circuit in which a first parallel circuit formed by a first fixed resistance element whose resistance does not vary dependent on the temperature and a first thermosensitive resistance element whose resistance does vary dependent on the temperature and a second parallel circuit formed of a second fixed resistance element and a second thermossensitive resistance element are connected in series, and a third fixed resistance element, wherein;
a voltage divided by said resistance circuit and said third fixed resistance element is applied as said gate voltage. - View Dependent Claims (3, 4)
-
6. A FET amplifier, using a FET as its amplifying element, provided with a temperature-compensating circuit for subjecting the gate voltage of said FET element to temperature compensation, wherein:
-
the source of said FET is grounded, said temperature-compensating circuit compensates said gate voltage so as to keep the drain current of said FET element constant at a prescribed amperage against variations in ambient temperature, wherein a compensable temperature range of said FET is at least from −
10°
C. to +80°
C., andsaid temperature-compensation circuit comprises a parallel resistor network including at least one resistor of a fixed value and at least one thermo-sensitive resistor which varies in value according to temperature.
-
-
7. A FET amplifier, using a FET as its amplifying element, provided with a temperature-compensating circuit for subjecting the gate voltage of said FET element to temperature compensation, wherein:
-
the source of said FET is directly grounded, said temperature-compensating circuit compensates said gate voltage so as to keep the drain current of said FET element constant at a prescribed amperage against variations in ambient temperature, and said temperature-compensation circuit comprises a parallel resistor network including at least one resistor of a fixed value and at least one thermo-sensitive resistor which varies in value according to temperature.
-
Specification