Measuring a property of a layer in multilayered structure

• US 6,906,801 B2
• Filed: 11/25/2003
• Issued: 06/14/2005
• Est. Priority Date: 06/10/1998
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Li, Jiping, Borden, Peter G.
• Primary Examiner(s): Rosenberger, Richard A.
• Application Number:
  US10/722,724
• Publication Number:
  US 20040119978A1
• Time in Patent Office: 567 Days
• Field of Search: 356/432, 356/445
• US Class Current: 356/432
• CPC Class Codes: G01N 21/1717 with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
• CPC Class Codes: G01R 31/2648 Characterising semiconductor materials testing of materials or semi-finished products G01R31/2831; testing during manufacture H01L22/00
• CPC Class Codes: G01R 31/2656 using non-ionising electromagnetic radiation, e.g. optical radiation
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

An apparatus measures a property of a layer (such as the sheet resistance of a conductive layer or thermal conductivity of a dielectric layer that is located underneath the conductive layer) by performing the following method: (1) focusing the heating beam on the heated a region (also called “heated region”) of the conductive layer (2) modulating the power of the heating beam at a predetermined frequency that is selected to be sufficiently low to ensure that at least a majority (preferably all) of the generated heat transfers out of the heated region by diffusion, and (3) measuring the power of another beam that is (a) reflected by the heated region, and (b) modulated in phase with modulation of the heating beam. The measurement in act (3) can be used directly as a measure of the resistance (per unit length) of a conductive line formed by patterning the conductive layer. Acts (1)-(3) can be repeated during fabrication of a semiconductor wafer, at each of a number of regions on a conductive line, and any change in measurement indicates a corresponding change in resistance of the line. When the measurement changes by more than a predetermined amount (e.g. by 10%), a process parameter that controls the fabrication process is changed to return the measurement to normal in the next wafer. Moreover, the thermal conductivity of the dielectric layer can be measured, or monitored for changes beyond a predetermined limit during a scan across the wafer, if resistance is known.

Claims

1. A method for determining a property of a portion of a substrate, the method comprising:

heating a region of a metal layer in the substrate using power modulated at a frequency that is predetermined to be sufficiently low to ensure that at least a majority of heat is transferred out of the region by diffusion rather than by a thermal wave;

measuring a change in reflectance of the metal layer at the frequency of modulation of the power of heating; and

using the change in reflectance in a programmed computer, to determine a measure of electrical conductance of a feature formed by patterning the metal layer.

2. The method of claim 1 wherein:

the frequency is lower than a maximum frequency of 5985 Hz.

3. The method of claim 1 further comprising:

changing the power used in said heating to a new power; and

repeating at the new power each of said heating, said measuring and said using in said region.

4. The method of claim 1 further comprising:

repeating said heating, said measuring and said using in another region.

5. The method of claim 1 wherein:

the feature is a via.

6. The method of claim 1 wherein:

the feature is a conductive line.

7. The method of claim 6 wherein:

the measure is resistance per unit length of the conductive line.

8. The method of claim 6 wherein:

said frequency is smaller than a maximum frequency, said maximum frequency being inversely related to at least one of;

length of the conductive line; and

a distance at which the temperature of said conductive line is an order of magnitude smaller than the temperature in said region.

9. The method of claim 1 further comprising:

forming the metal layer by using at least one process parameter; and

changing the process parameter if necessary depending on the measure of electrical conductance determined during said using.

10. The method of claim 1 wherein:

said measuring comprises using a lock-in amplifier tuned to said frequency.

11. A method for determining a property of a portion of a substrate, the method comprising:

heating a region of conductive material in the substrate using a continuous heat source whose power is modulated at a frequency that is predetermined to be sufficiently low to ensure that at least a majority of heat is transferred out of the region by diffusion rather than by a thermal wave;

measuring a change in reflectance of the region of conductive material at the frequency of modulation of the power of the continuous heat source; and

using the change in reflectance of the conductive material in a programmed computer, to determine an indication of thermal conductivity of a dielectric material underneath the conductive material.

12. The method of claim 11 wherein:

the conductive material in the region is unpatterned.

13. The method of claim 11 wherein:

the conductive material in the region is comprised in a plurality of conductive lines.

14. The method of claim 11 further comprising:

changing the power of the continuous heat source used in said heating to a new power; and

repeating at the new power each of said heating, said measuring and said using in said region.

15. The method of claim 11 further comprising:

using the thermal conductivity of the dielectric material to determine an indication of a dielectric constant of the dielectric material.

16. The method of claim 11 further comprising:

using the thermal conductivity of the dielectric material to determine an indication of a capacitance between the conductive material and an adjacent conductor.

17. The method of claim 11 further comprising:

using the thermal conductivity of the dielectric material to determine an indication of speed of transmission of signals.