Multi-chip package (MCP) with a conductive bar and method for manufacturing the same

• US 6,908,785 B2
• Filed: 11/27/2002
• Issued: 06/21/2005
• Est. Priority Date: 12/06/2001
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Gu-Sung
• Primary Examiner(s): Lebentritt, Michael S.
• Assistant Examiner(s): Roman, Angel
• Application Number:
  US10/306,931
• Publication Number:
  US 20030107119A1
• Time in Patent Office: 937 Days
• Field of Search: 438/106, 438/109, 438/126
• US Class Current: 438/106
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02 Bonding areas; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/02379 Fan-out arrangement
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/24011 Deposited, e.g. MCM-D type
• CPC Class Codes: H01L 2224/24145 the bodies being stacked
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24996 being formed on an item to be connected not being a semiconductor or solid-state body
• CPC Class Codes: H01L 2224/24998 Reinforcing structures, e.g. ramp-like support
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/9201 Forming connectors during the connecting process, e.g. in-situ formation of bumps
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/481 : Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier

Abstract

A multi-chip package (MCP) is provided. The MCP comprises a plurality of stacked semiconductor chips, each including a chip pad and a first insulating layer overlying the chip pad with an opening to expose a portion of the chip pad. Each chip additionally includes a pad redistribution line formed on the first insulating layer and a second insulating layer covering the pad redistribution line. A via hole is formed through the chip, the first insulating layer, a pad redistribution line and the second insulating layer. The MCP further includes a protective layer formed on the bottom of the lowest semiconductor chip. The protective layer includes a conductive pad formed opposite the bottom of the lowest semiconductor chip. A conductive bar extends through the via holes of the stacked semiconductor chips, from the conductive pad, and is electrically connected to the pad redistribution line of the stacked semiconductor chips.

Claims

1. A method for manufacturing a MCP, the method comprising:

forming a first insulating layer on a semiconductor chip having a chip pad, the first insulating layer having an opening to expose a portion of the chip pad;

forming a pad redistribution line an the first insulating layer, the pad redistribution line electrically connected to the chip pad;

forming a second insulating layer on the first insulating layer to cover the pad redistribution line;

forming a via hole extending through tho chip, the first insulating layer, a pad redistribution pattern and the second insulating layer.

2. The method of claim 1, further comprising back lapping to reduce a total thickness of the MCP by thinning the bottom of the semiconductor chip.

3. The method of claim 1, wherein the forming a via hole comprises:

forming a photosensitive layer on both sides of the semiconductor chip;

forming a hole in the photosensitive layer at the bottom of the semiconductor chip corresponding to a portion of the pad redistribution line to form a mask; and

penetrating through the chip, the first insulating layer, a pad redistribution pattern and the second insulating layer, using the mask.

4. The method of claim 3, wherein the penetrating comprises sputtering using a high-density plasma.

5. The method of claim 3, further comprising wet etching to remove burr of the via hole.

6. A The method of claim 3, further comprising removing the photosensitive layers.

7. A method for forming a substrate for manufacturing an MCP having a plurality of stacked semiconductor chips, the method comprising:

forming a polymer layer on one side of a substrate;

forming a conductive pad overlying the polymer layer;

forming a protective layer overlying the conductive pad;

forming a first opening in the protective layer to expose a portion of the conductive pad; and

forming a conductive bar extending upwardly from the conductive pad.

8. The method of claim 7, where the forming a conductive bar comprises:

forming a photoresist layer on the protective layer to a thickness corresponding to a total thickness of the stacked semiconductor chips;

forming a second opening in the photoresist layer to expose the portion of the conductive pad,

forming the conductive bar by filling the second opening with a conductive material, and removing the photoresist layer.

9. The method of claim 7, wherein the protective layer comprises polyimide.

10. The method of claim 9, further comprising hard-curing the protective layer.

11. The method of claim 7, further comprising forming a metal seed layer on the substrate before forming the conductive pad.

12. The method of claim 7, wherein the polymer layer comprises a photosensitive polymer.

13. A method for forming a MCP, wherein the MCP comprises a plurality of stacked semiconductor chips, each chip including a chip pad on a main surface thereof;

a first insulating layer overlying the chip pad, the first insulating layer having an opening to expose a portion of the chip pad;

a pad redistribution line formed on the first insulating layer, a second insulating layer covering the pad redistribution line, wherein a via hole is formed through the chip, the first insulating layer, a pad redistribution line and the second insulating layer, the method comprising;

forming a polymer layer on one side of a substrate;

forming a conductive pad overlying the polymer layer;

forming a protective layer overlying the conductive pad;

forming an opening in the protective layer to expose a portion of the conductive pad; and

forming a conductive bar extending upwardly from the conductive pad;

inserting the conductive bar into the via holes and stacking the plurality of the semiconductor chips on the substrate such that the conductive bar extends through the via holes of the stacked semiconductor chips, from the conductive pad;

electrically connecting the conductive bar to the pad redistribution line.

14. The method of claim 13, further comprising:

removing the substrate and the photosensitive polymer layer; and

attaching an external connection terminal to the conductive pad.

15. The method of claim 13, wherein the electrically connecting the conductive bar to the pad redistribution line comprises forming a plating layer on the conductive bar.

16. The method of claim 13, wherein the protective layer is attached to the bottom of the lowest semiconductor chip, the protective layer including the conductive pad opposite the bottom of the lowest semiconductor chip.

17. The method of claim 13, further comprising forming a coating layer on the conductive pad.

18. The method of claim 17, wherein the coating layer is formed by a Ni electroless plating method.

19. The method of claim 13, further comprising:

attaching a cap layer to the uppermost semiconductor chip.

20. The method of claim 13, wherein the substrate is a glass substrate.

21. The method a claim 17, wherein the glass substrate is made of sapphire.