Support structures for wirebond regions of contact pads over low modulus materials
First Claim
1. A method of forming a semiconductor device, comprising:
- providing a workpiece comprising a contact pad region having a selected area, at least one integrated circuit being formed within the workpiece;
forming a plurality of low modulus dielectric layers over the workpiece;
forming a plurality of support via groups in said contact pad region, and within each low modulus dielectric layer to provide mechanical support to said low modulus dielectric layers, each one of the support via groups comprising at least three vias, and having a bottom end and a top end;
forming a plurality of support structures within each low modulus dielectric layer in at least the contact pad region, the support structures located at the top ends of the vias and the bottom ends of the vias located over support structures in an adjacent underlying low modulus dielectric layer, and wherein forming the support structures comprises the steps of forming support structures in odd alternating low modulus dielectric layers by disposing a plurality of first conductive lines parallel to one another in a first direction along at least the length of the contact pad bond portion and forming support structures in even alternating low modulus dielectric layers by disposing a plurality of second conductive lines parallel to one another in a second direction alone at least the width of the contact pad bond portion, the second direction being substantially perpendicular to the first direction, wherein forming the support via groups comprises disposing the support vias at the intersection of the first and second conductive lines;
disposing a high modulus dielectric layer over the top of each low modulus dielectric layer; and
forming at least one contact pad in the contact pad region within the high modulus dielectric layer.
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0 Petitions
Accused Products
Abstract
A semiconductor device (200) having support structures (218, 226, 236) beneath wirebond regions (214) of contact pads (204) and a method of forming same. Low modulus dielectric layers (216, 222, 232) are disposed over a workpiece (212). Support structures (218, 226, 236) are formed in the low modulus dielectric layers (216, 222, 232), and support vias (224, 234) are formed between the support structures (218, 226, 236). A high modulus dielectric film (220, 230) is disposed between each low modulus dielectric layer (216, 222, 232), and a high modulus dielectric layer (256) is disposed over the top low modulus dielectric layer (232). Contact pads (204) are formed in the high modulus dielectric layer (256). Each support via (234) within the low modulus dielectric layer (232) resides directly above a support via (224) in the underlying low modulus dielectric layer (222), to form a plurality of via support stacks within the low modulus dielectric layers (216, 222, 232).
80 Citations
36 Claims
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1. A method of forming a semiconductor device, comprising:
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providing a workpiece comprising a contact pad region having a selected area, at least one integrated circuit being formed within the workpiece;
forming a plurality of low modulus dielectric layers over the workpiece;
forming a plurality of support via groups in said contact pad region, and within each low modulus dielectric layer to provide mechanical support to said low modulus dielectric layers, each one of the support via groups comprising at least three vias, and having a bottom end and a top end;
forming a plurality of support structures within each low modulus dielectric layer in at least the contact pad region, the support structures located at the top ends of the vias and the bottom ends of the vias located over support structures in an adjacent underlying low modulus dielectric layer, and wherein forming the support structures comprises the steps of forming support structures in odd alternating low modulus dielectric layers by disposing a plurality of first conductive lines parallel to one another in a first direction along at least the length of the contact pad bond portion and forming support structures in even alternating low modulus dielectric layers by disposing a plurality of second conductive lines parallel to one another in a second direction alone at least the width of the contact pad bond portion, the second direction being substantially perpendicular to the first direction, wherein forming the support via groups comprises disposing the support vias at the intersection of the first and second conductive lines;
disposing a high modulus dielectric layer over the top of each low modulus dielectric layer; and
forming at least one contact pad in the contact pad region within the high modulus dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor device, comprising:
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providing a workpiece comprising a contact pad region having a selected area, at least one integrated circuit being formed within the workpiece;
forming a plurality of low modulus dielectric layers over the workpiece;
forming a plurality of high modulus dielectric layers between each low modulus dielectric layer;
forming a plurality of support via groups in said contact pad region, and within each high modulus dielectric layer, each one of the support via groups comprising at least three vias having a bottom pad and a top end;
forming a plurality of support structures within each low modulus dielectric layer in at least the contact pad region to provide mechanical support to said low modulus dielectric layer, a support structure located at the top ends of at least each via group and the bottom ends of each via group located over a support structure in an adjacent underlying low modulus dielectric layer, and wherein forming the support structures comprises the steps of forming support structures in odd alternating low modulus dielectric layers by disposing a plurality of first conductive lines parallel to one another in a first direction along at least the length of the contact pad bond portion and forming support structures in even alternating low modulus dielectric layers by disposing a plurality of second conductive lines parallel to one another in a second direction along at least the width of the contact pad bond portion, the second direction being substantially perpendicular to the first direction, wherein forming the support via groups comprises disposing the support vias at the intersection of the first and second conductive lines;
disposing a high modulus dielectric layer over each low modulus dielectric layer; and
forming at least one contact pad in the contact pad region within the high modulus dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A method of forming a semiconductor device, comprising:
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providing a workpiece comprising a contact pad region having a selected area, at least one integrated circuit being formed within the workpiece;
forming a plurality of low modulus dielectric layers over the workpiece;
forming a plurality of support via groups in said conduct pad region, and within each low modulus dielectric layer to provide support to said low modulus dielectric layers, each one of the support via groups comprising at least three vias, and each via in said plurality of support via groups defining a cross sectional area, and having a bottom end and a top end, the total amount of the cross sectional area of the support vias in each low modulus dielectric layer being at least seven percent (7%) of said selected area of said contact pad region;
forming a plurality of support structures within each low modulus dielectric layer in at least the contact pad region to provide mechanical support to said low modulus dielectric layer, the support structures located at the top ends of the vias and the bottom ends of the vias located over support structures in an adjacent underlying low modulus dielectric layer, and wherein forming the support structures comprises the steps of forming support structures in odd alternating low modulus dielectric layers by disposing a plurality of first conductive lines parallel to one another in a first direction along at least the length of the contact pad bond portion and forming support structures in even alternating low modulus dielectric layers by disposing a plurality of second conductive lines parallel to one another in a second discretion along at least the width of the contact pad bond portion, the second direction being substantially perpendicular to the first direction, wherein forming the support via groups comprises disposing the support vias at the intersection of the first and second conductive lines;
disposing a high modulus dielectric layer over the top low modulus dielectric layer; and
forming at least one contact pad in the contact pad region within the high modulus dielectric layer. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification