Display device
First Claim
1. A display device comprising:
- a display portion having unit pixels arranged in a matrix, each unit pixel having a pixel switching element and a pixel electrode;
a gate driver circuit for supplying scan signals to gate lines;
a source driver circuit for supplying image signals to source lines; and
a power supply circuit for generating power supply voltages for driving the gate driver circuit and the source driver circuit from an inputted reference power supply voltage VDD and for supplying the power supply voltages to drive the gate driver circuit and the source driver circuit;
wherein the pixel switching elements are thin film transistors made of a polycrystalline silicon semiconductor formed on an insulating substrate;
the power supply circuit is a charge pump-type power supply circuit and is configured for converting the reference power supply voltage VDD into power supply voltages that are integral multiples of voltage VDD; and
the power supply circuit comprises a polycrystalline silicon semiconductor and is integrally formed on the insulating substrate.
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Accused Products
Abstract
The present invention provides a liquid crystal display device having a liquid crystal display portion, a gate driver circuit, a source driver circuit, and a power supply circuit, where the liquid crystal display portion includes unit pixels with pixel switching elements and pixel electrodes arranged in a matrix. The pixel switching elements are thin film transistors that are made of polycrystalline silicon semiconductor formed on an insulating substrate. The power supply circuit is a charge pump-type power supply circuit, is made of a polycrystalline silicon semiconductor, and is a built-in circuit integrally formed on an insulating substrate. With such a configuration, a liquid crystal display device that greatly reduces power consumption is realized.
66 Citations
21 Claims
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1. A display device comprising:
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a display portion having unit pixels arranged in a matrix, each unit pixel having a pixel switching element and a pixel electrode;
a gate driver circuit for supplying scan signals to gate lines;
a source driver circuit for supplying image signals to source lines; and
a power supply circuit for generating power supply voltages for driving the gate driver circuit and the source driver circuit from an inputted reference power supply voltage VDD and for supplying the power supply voltages to drive the gate driver circuit and the source driver circuit;
wherein the pixel switching elements are thin film transistors made of a polycrystalline silicon semiconductor formed on an insulating substrate;
the power supply circuit is a charge pump-type power supply circuit and is configured for converting the reference power supply voltage VDD into power supply voltages that are integral multiples of voltage VDD; and
the power supply circuit comprises a polycrystalline silicon semiconductor and is integrally formed on the insulating substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A display device comprising:
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a display portion having unit pixels arranged in a matrix;
a gate driver circuit for supplying scan signals to the gate lines;
a source driver circuit for supplying digital image signals to the source lines;
a power supply circuit for generating power supply voltages for driving the gate driver circuit and the source driver circuit from an inputted reference power supply voltage VDD and for supplying the power supply voltages to drive the gate driver circuit and the source driver circuit;
wherein each of the unit pixels is divided into a plurality of sub-pixels, and each of the sub-pixels has a sub-pixel electrode and a sub-pixel switching element comprising a thin film transistor made of a polycrystalline silicon semiconductor formed on an insulating substrate;
the power supply circuit is a charge pump-type power supply circuit and is configured for converting the reference power supply voltage VDD into power supply voltages that are integral multiples of voltage VDD; and
the power supply circuit comprising a polycrystalline silicon semiconductor and is integrally formed on the insulating substrate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification