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Nonvolatile memory having bit line discharge, and method of operation thereof

  • US 6,909,639 B2
  • Filed: 04/22/2003
  • Issued: 06/21/2005
  • Est. Priority Date: 04/22/2003
  • Status: Expired due to Term
First Claim
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1. A nonvolatile virtual ground integrated circuit memory array comprising:

  • a plurality of nonvolatile memory cells;

    a plurality of bit lines, the bit lines being coupled to respective subsets of the memory cells; and

    a spurious programming voltage discharge circuit coupled to the bit lines and comprising;

    a plurality of discharge control elements coupled to the bit lines; and

    a discharge section coupled to the discharge control elements.

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