Contact for use in an integrated circuit and a method of manufacture therefor
First Claim
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1. A contact for use in an integrated circuit, comprising:
- a via located in a substrate; and
a contact plug located in said via, wherein said contact plug has a first portion having a notch removed therefrom and a second portion filling said notch, and wherein a geometric shape of a cross-section of said second portion is non-conformal to a geometric shape of a cross-section of said via.
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Abstract
The present invention provides a contact for use in an integrated circuit, a method of manufacture therefor, and an integrated circuit including the aforementioned contact. The contact, in accordance with the principles of the present invention, may include a via located in a substrate, and a contact plug located in the via, wherein the contact plug has a first portion having a notch removed therefrom and a second portion filling the notch.
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Citations
20 Claims
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1. A contact for use in an integrated circuit, comprising:
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a via located in a substrate; and
a contact plug located in said via, wherein said contact plug has a first portion having a notch removed therefrom and a second portion filling said notch, and wherein a geometric shape of a cross-section of said second portion is non-conformal to a geometric shape of a cross-section of said via. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a contact for use in an integrated circuit, comprising:
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forming a via in a substrate; and
placing a contact plug in said via, wherein said contact plug has a first portion having a notch removed therefrom and a second portion filling said notch, and wherein a geometric shape of a cross-section of said second portion is non-conformal to a geometric shape of a cross-section of said via. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. An integrated circuit, comprising:
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transistors located over a substrate; and
an interlevel dielectric layer located over said transistors, said interlevel dielectric layer having a contact for contacting said transistors located therein, said contact including;
a via located in said interlevel dielectric layer; and
a contact plug located in said via, wherein said contact plug has a first portion having a notch removed therefrom and a second portion filling said notch, and wherein a geometric shape of a cross-section of said second portion is non-conformal to a geometric shape of a cross-section of said via. - View Dependent Claims (19, 20)
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Specification