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Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life

  • US 6,910,947 B2
  • Filed: 11/30/2001
  • Issued: 06/28/2005
  • Est. Priority Date: 06/19/2001
  • Status: Expired due to Fees
First Claim
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1. A method of conditioning a planarizing surface in a chemical mechanical polishing (CMP) apparatus having a polishing pad against which a wafer is positioned for removal of material therefrom and a conditioning disk is positioned for conditioning of the polishing pad, comprising the steps of:

  • a) providing a pad wear and conditioning model that defines wafer material removal rate as a function of at least one pad conditioning parameter selected from the group including rotation speed and rotation direction of a conditioning disk;

    b) polishing a wafer in a CMP apparatus under a first set of pad conditioning parameters selected to maintain wafer material removal rates within preselected minimum and maximum removal rates;

    c) determining a wafer material removal rate occurring during said polishing step; and

    d) calculating updated pad conditioning parameters based upon said determined wafer material removal rate of said step (c) and the pad wear and conditioning model of said step (a).

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