×

ALD apparatus and method

  • US 6,911,092 B2
  • Filed: 01/17/2003
  • Issued: 06/28/2005
  • Est. Priority Date: 01/17/2002
  • Status: Active Grant
First Claim
Patent Images

1. An atomic layer deposition system, comprising:

  • an atomic layer deposition chamber (“

    deposition chamber”

    ), said deposition chamber comprising a substrate holder and a heater;

    a draw-gas introduction chamber (“

    DGIC”

    );

    a deposition-chamber flow restriction element (“

    FRE”

    ) in serial fluidic communication between said deposition chamber and said DGIC;

    a draw-gas source;

    a draw-source shut-off valve in serial fluidic communication between said draw-gas source and said DGIC;

    a draw-source-FRE in serial fluidic communication between said draw-gas source and said DGIC;

    a draw control chamber;

    a DGIC-FRE in serial fluidic communication between said DGIC and said draw control chamber;

    a draw-control outlet in serial fluidic communication with said draw control chamber;

    a vacuum pump in serial fluidic communication with said draw-control outlet;

    a draw-control FRE in serial fluidic communication between said draw-control outlet and said vacuum pump;

    a plurality of chemical-gas sources;

    a plurality of booster chambers, each booster chamber being in serial fluidic communication with one of said chemical-gas sources;

    a plurality of chemical-source-FREs, each chemical-source-FRE being in serial fluidic communication between one of said chemical-gas sources and one of said booster chambers;

    a plurality of chemical-dosage shut-off valves, each chemical-dosage shut-off valve being in serial fluidic communication between one of said booster chambers and said deposition chamber;

    a plurality of booster-FREs, each booster-FRE being in serial fluidic communication between one of said booster chambers and said deposition chamber;

    a purge-gas source;

    a purge-source shut-off valve in serial fluidic communication between said purge-gas source and said deposition chamber; and

    a purge-source-FRE in serial fluidic communication between said purge-gas source and said deposition chamber.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×