ALD apparatus and method
First Claim
Patent Images
1. An atomic layer deposition system, comprising:
- an atomic layer deposition chamber (“
deposition chamber”
), said deposition chamber comprising a substrate holder and a heater;
a draw-gas introduction chamber (“
DGIC”
);
a deposition-chamber flow restriction element (“
FRE”
) in serial fluidic communication between said deposition chamber and said DGIC;
a draw-gas source;
a draw-source shut-off valve in serial fluidic communication between said draw-gas source and said DGIC;
a draw-source-FRE in serial fluidic communication between said draw-gas source and said DGIC;
a draw control chamber;
a DGIC-FRE in serial fluidic communication between said DGIC and said draw control chamber;
a draw-control outlet in serial fluidic communication with said draw control chamber;
a vacuum pump in serial fluidic communication with said draw-control outlet;
a draw-control FRE in serial fluidic communication between said draw-control outlet and said vacuum pump;
a plurality of chemical-gas sources;
a plurality of booster chambers, each booster chamber being in serial fluidic communication with one of said chemical-gas sources;
a plurality of chemical-source-FREs, each chemical-source-FRE being in serial fluidic communication between one of said chemical-gas sources and one of said booster chambers;
a plurality of chemical-dosage shut-off valves, each chemical-dosage shut-off valve being in serial fluidic communication between one of said booster chambers and said deposition chamber;
a plurality of booster-FREs, each booster-FRE being in serial fluidic communication between one of said booster chambers and said deposition chamber;
a purge-gas source;
a purge-source shut-off valve in serial fluidic communication between said purge-gas source and said deposition chamber; and
a purge-source-FRE in serial fluidic communication between said purge-gas source and said deposition chamber.
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Abstract
An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.
472 Citations
47 Claims
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1. An atomic layer deposition system, comprising:
-
an atomic layer deposition chamber (“
deposition chamber”
), said deposition chamber comprising a substrate holder and a heater;
a draw-gas introduction chamber (“
DGIC”
);
a deposition-chamber flow restriction element (“
FRE”
) in serial fluidic communication between said deposition chamber and said DGIC;
a draw-gas source;
a draw-source shut-off valve in serial fluidic communication between said draw-gas source and said DGIC;
a draw-source-FRE in serial fluidic communication between said draw-gas source and said DGIC;
a draw control chamber;
a DGIC-FRE in serial fluidic communication between said DGIC and said draw control chamber;
a draw-control outlet in serial fluidic communication with said draw control chamber;
a vacuum pump in serial fluidic communication with said draw-control outlet;
a draw-control FRE in serial fluidic communication between said draw-control outlet and said vacuum pump;
a plurality of chemical-gas sources;
a plurality of booster chambers, each booster chamber being in serial fluidic communication with one of said chemical-gas sources;
a plurality of chemical-source-FREs, each chemical-source-FRE being in serial fluidic communication between one of said chemical-gas sources and one of said booster chambers;
a plurality of chemical-dosage shut-off valves, each chemical-dosage shut-off valve being in serial fluidic communication between one of said booster chambers and said deposition chamber;
a plurality of booster-FREs, each booster-FRE being in serial fluidic communication between one of said booster chambers and said deposition chamber;
a purge-gas source;
a purge-source shut-off valve in serial fluidic communication between said purge-gas source and said deposition chamber; and
a purge-source-FRE in serial fluidic communication between said purge-gas source and said deposition chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. An apparatus for modulating flow, draw, and pressure of gas in a process chamber, comprising:
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a process chamber;
a process-gas conduit connected to said process chamber, said process-gas conduit configured for controlling a flow rate of gas into said process chamber;
a draw-gas source;
a draw control chamber, said draw control chamber configured for a flow of said draw-gas supplied from said draw-gas source;
a process-chamber flow restriction element (“
FRE”
), said process-chamber FRE in serial fluidic communication between said process chamber and said draw control chamber;
a draw exhaust line in serial fluidic communication with said draw control chamber;
and a draw-control FRE in serial fluidic communication between said draw control chamber and said draw exhaust line. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
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Specification