Methods and systems for forming slots in a substrate
First Claim
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1. A method of fabricating a slot in a print head substrate, comprising:
- dry etching through a first surface of the substrate having a thickness between the first and a second opposing surfaces, wherein said dry etching removes about 50 percent of the thickness of the substrate; and
, sand drilling through the second surface of the substrate effective to form, in combination with said etching, a slot at least a portion of which passes entirely through the thickness of the substrate, wherein the slot has a maximum slot width measured parallel to the first surface that is less than one half of the thickness.
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Abstract
The described embodiments relate to methods and systems for forming slots in a substrate. In one exemplary embodiment, a slot is formed in a substrate that has first and second opposing surfaces. A first trench is dry etched through the first surface of the substrate. A second trench is created through the second surface of the substrate effective to form, in combination with the first trench, a slot. At least a portion of the slot passes entirely through the substrate, and the maximum width of the slot is less than or equal to about 50 of the thickness of the substrate.
43 Citations
17 Claims
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1. A method of fabricating a slot in a print head substrate, comprising:
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dry etching through a first surface of the substrate having a thickness between the first and a second opposing surfaces, wherein said dry etching removes about 50 percent of the thickness of the substrate; and
,sand drilling through the second surface of the substrate effective to form, in combination with said etching, a slot at least a portion of which passes entirely through the thickness of the substrate, wherein the slot has a maximum slot width measured parallel to the first surface that is less than one half of the thickness.
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2. A method of forming fluid handling slots in a semiconductor substrate having a thickness between opposing first and second surfaces comprising:
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dry etching into the substrate from the first surface to form a first trench having a trench length and a trench width; and
,removing substrate material through the second surface to form a second trench, wherein at least a portion of the first and second trenches intersect to form a slot through the substrate, and wherein the slot has a maximum slot width measured parallel to the first surface that is less than one half of the thickness. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming slots in a semiconductor substrate having first and second opposing surfaces comprising:
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dry etching a first trench through the first surface of the substrate; and
,creating a second trench through the second surface of the substrate effective to form, in combination with the first trench, a slot at least a portion of which passes entirely through the substrate, wherein the maximum width of the slot is less than or equal to about 50 percent of the thickness of the substrate. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification