Plasma processing method and apparatus using dynamic sensing of a plasma environment

• US 6,911,157 B2
• Filed: 01/21/2003
• Issued: 06/28/2005
• Est. Priority Date: 09/12/2000
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Ikenaga, Kazuyuki, Yamamoto, Hideyuki, Edamura, Manabu
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US10/347,402
• Publication Number:
  US 20030132195A1
• Time in Patent Office: 889 Days
• Field of Search: 216/59, 216/60, 216/67, 156/345.24, 156/345.25, 156/345.26, 156/345, 118/712, 438/14, 438/16
• US Class Current: 216/59
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

At least one control parameter such as power supplied to a plasma, process pressure, gas flow rate, and radio frequency bias power to a wafer is changed for an extremely short time as compared with an entire plasma processing time, to the extent that such a change does not affect the result of plasma processing on the wafer, to monitor a temporal change of a plasma state which occurs at the time of changing. A signal resulting from the monitoring method is used to control or diagnose the plasma processing, thereby making it possible to accomplish miniature etching works, high quality deposition, surface processing.

Claims

1. A plasma processing method comprising the steps of:

changing at least one parameter for controlling a process utilizing a plasma processing apparatus to the extent that the change does not substantially affect the result of plasma processing on a wafer, said at least one parameter being selected from a group including power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer;

detecting attenuation patterns of plasma emission intensities of a plurality of wavelengths as a plasma emission signal which occurs in a plasma state in response to the changing of said at (east one parameter at a monitoring timing and providing an output indicative thereof;

determining a response characteristic of the detected plasma emission signal for each monitoring timing and providing an output signal thereof; and

performing a control of plasma processing and/or diagnosis of said plasma processing apparatus using said output signal.

4. A plasma processing method according to claim 1, wherein

said step of changing includes operating said plasma processing apparatus while intermittently cutting off the power supplied to the plasma or the radio frequency bias, as said parameter, to said wafer in repetition, a period of the intermittent cutting off representing the monitoring timing;

and

said step of detecting includes detection of the plasma emission signal indicative of a temporal change in the plasma state immediately after the power or the bias is cut off.

5. A plasma processing method according to claim 1, wherein each monitoring timing occurs at a predetermined timing.

6. A plasma processing method according to claim 1, wherein the changing of the at least one parameter includes one of lowering and cutting off the power supplied to the plasma for a period not greater than 100 μ

s.

7. A plasma processing method according to claim 6, wherein the period is in a range of 10 μ

s to 100 μ

s.

2. A plasma processing method comprising the steps of:

operating a plasma processing apparatus while intermittently cutting off the power supplied to the plasma;

detecting a signal representative of attenuation patterns of plasma emission intensities of a plurality of wavelengths in a plasma state immediately after the power is cut off, using optical monitoring means; and

performing a control of plasma processing and/or diagnosis of said plasma processing apparatus using said detected signal.

8. A plasma processing method according to claim 2, wherein the power supplied to the plasma is cut off for a period not greater than 100 μ

s without substantially affecting plasma processing of an object to be processed by the plasma processing apparatus.

9. A plasma processing method according to claim 8, wherein the period is in a range of 10 μ

s to 100 μ

s.

3. A plasma processing method comprising the steps of:

triggering a change of at least one parameter for controlling a process for a substantially shorter time than an entire plasma processing time of a plasma processing apparatus to the extent that the change does not substantially affect the result of plasma processing on a wafer, said at least one parameter being selected from a group including power supplied to a plasma, a process pressure, a gas flow rate, and radio frequency bias power to the wafer;

detecting attenuation patterns of plasma emission intensities of a plurality of wavelengths as a signal in a plasma light emission state which occurs in response to execution of said step of triggering at a monitoring timing associated with the parameter changing and providing an output indicative thereof;

determining in response to the output a response characteristic pattern of the detected plasma emission signal for each monitoring timing, and providing an output signal indicative of the determined characteristic pattern;

analyzing the plasma state or a process state utilizing a temporal change in plasma light emission based on the output signal; and

performing a control of plasma processing and/or diagnosis of said plasma processing apparatus using data representative of a result of the analysis.

10. A plasma processing method according to claim 3, wherein the changing of the at least one parameter includes one of lowering and cutting off the power supplied to the plasma for a period not greater than 100 μ

s.

11. A plasma processing method according to claim 10, wherein the period is in a range of 10 μ

s to 100 μ

s.