Ultra-high capacitance device based on nanostructures
First Claim
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1. A method comprising:
- providing a substrate;
forming an insulating nanostructure over said substrate, said insulating nanostructure being discontinuous;
forming a thin conductor over said insulating nanostructure, said thin conductor being conformal over said insulating nanostructure and said substrate;
forming a thin dielectric over said thin conductor; and
forming an upper conductor over said thin dielectric.
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Abstract
The present invention discloses a method including providing a substrate; forming a lower conductor over the substrate; forming a conducting nanostructure over the lower conductor; forming a thin dielectric over the conducting nanostructure; and forming an upper conductor over the thin dielectric.
The present invention further discloses a device including a substrate; a lower conductor located over the substrate; a conducting nanostructure located over the lower conductor; a thin dielectric located over the conducting nanostructure; and an upper conductor located over the thin dielectric.
37 Citations
5 Claims
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1. A method comprising:
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providing a substrate;
forming an insulating nanostructure over said substrate, said insulating nanostructure being discontinuous;
forming a thin conductor over said insulating nanostructure, said thin conductor being conformal over said insulating nanostructure and said substrate;
forming a thin dielectric over said thin conductor; and
forming an upper conductor over said thin dielectric. - View Dependent Claims (2, 3, 4, 5)
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Specification