Semiconductor display device and manufacturing method thereof

• US 6,911,688 B2
• Filed: 04/14/2003
• Issued: 06/28/2005
• Est. Priority Date: 04/15/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osame, Mitsuaki, Murakami, Satoshi, Hayakawa, Masahiko, Kato, Kiyoshi, Yamazaki, Shunpei, Fujikawa, Saishi, Hirosue, Takashi
• Primary Examiner(s): Zarabian, Amir
• Assistant Examiner(s): Soward, Ida M.
• Application Number:
  US10/412,687
• Publication Number:
  US 20040075094A1
• Time in Patent Office: 806 Days
• Field of Search: 257/40, 257/59, 257/66, 257/68, 257/71, 257296-300, 257310-313, 257/359
• US Class Current: 257/296
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: Y10S 257/906 Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
• CPC Class Codes: Y10S 257/908 Dram configuration with transistors and capacitors of pairs of cells along a straight line between adjacent bit lines

Abstract

A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

Claims

1. A semiconductor display device comprising:

a protective circuit comprising a TFT and a capacitor,

the TFT comprising;

an active layer, a gate insulating film in contact with the active layer, and a gate electrode in contact with the gate insulating film;

a first inorganic insulating film formed over the TFT;

an organic resin film formed in contact with the first inorganic insulating film;

a first opening and a second opening formed in the organic resin film;

a second inorganic insulating film formed over the organic resin film and being in contact with the first inorganic film in the first opening;

a contact hole formed through the gate insulating film and the first and second inorganic insulating films in the first opening so as to expose the active layer; and

a wiring formed on the second inorganic insulating film and connected to the active layer through the contact hole,

wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the first and second openings is increased,

the capacitor comprising;

a first electrode comprising the same conductive material as the gate electrode; and

a second electrode comprising the same conductive material as the wiring,

wherein portions of the first and second inorganic insulating films overlap the first electrode and the second electrode in the second opening.

5. A semiconductor display device according to claim 1 wherein the protective circuit rectifies the waveform of a signal.

6. A semiconductor display device according to claim 1 wherein the protective circuit has a resistor.

7. A semiconductor display device according to claim 1 wherein the organic resin film comprises an acrylic film.

8. A semiconductor display device according to claim 1 wherein each of the first and second inorganic insulating films is selected from the group consisting of a silicon nitride film, a silicon oxynitride film, and an aluminum oxynitride film.

9. An electronic apparatus having the semiconductor display device according to claim 1, wherein the electronic apparatus is selected from the group consisting of a portable information terminal, an electronic book, a mobile computer, a video camera, a digital camera, a personal computer, a TV receiver, a cellular phone, and a projection display apparatus.

2. A semiconductor display device comprising:

a protective circuit comprising a TFT and a capacitor,

the TFT comprising;

an active layer, a gate insulating film in contact with the active layer, and a gate electrode in contact with the gate insulating film;

a first inorganic insulating film formed over the TFT;

an organic resin film formed in contact with the first inorganic insulating film;

a first opening and a second opening formed in the organic resin film;

a second inorganic insulating film formed over the organic resin film and being in contact with the first inorganic film in the first opening;

a contact hole formed through the gate insulating film and the first and second inorganic insulating films in the first opening so as to expose the active layer; and

a wiring formed on the second inorganic insulating film and connected to the active layer through the contact hole,

wherein edges of the first and second openings on a surface of the organic resin film have in section a parabolic shape whose principal axis is in a plane parallel to a substrate,

the capacitor comprising;

a first electrode comprising the same conductive material as the gate electrode; and

a second electrode comprising the same conductive material as the wiring,

wherein portions of the first and second inorganic insulating films overlap the first electrode and the second electrode in the second opening.

10. A semiconductor display device according to claim 2, wherein the protective circuit rectifies the waveform of a signal.

11. A semiconductor display device according to claim 2, wherein the protective circuit has a resistor.

12. A semiconductor display device according to claim 2, wherein the organic resin film comprises an acrylic film.

13. A semiconductor display device according to claim 2, wherein each of the first and second inorganic insulating films is selected from the group consisting of a silicon nitride film, a silicon oxynitride film, and an aluminum oxynitride film.

14. An electronic apparatus having the semiconductor display device according to claim 2, wherein the electronic apparatus is selected from the group consisting of a portable information terminal, an electronic book, a mobile computer, a video camera, a digital camera, a personal computer, a TV receiver, a cellular phone, and a projection display apparatus.

3. A semiconductor display device comprising:

a pixel portion and a protective circuit each comprising a TFT and a capacitor,

the TFT comprising;

an active layer, a gate insulating film in contact with the active layer, and a gate electrode in contact with the gate insulating film;

a first inorganic insulating film formed over the TFT;

an organic resin film formed in contact with the first inorganic insulating film;

a first opening and a second opening formed in the organic resin film;

a second inorganic insulating film formed over the organic resin film and being in contact with the first inorganic film in the first opening;

a contact hole formed through the gate insulating film and the first and second inorganic insulating films in the first opening so as to expose the active layer; and

a wiring formed on the second inorganic insulating film and connected to the active layer through the contact hole,

wherein the radius of curvature on a surface of the organic resin film is continuously lengthened as the distance from the first and second openings is increased,

the capacitor comprising;

a first electrode comprising the same conductive material as the gate electrode; and

a second electrode comprising the same conductive material as the wiring,

wherein portions of the first and second inorganic insulating films overlap the first electrode and the second electrode in the second opening.

15. A semiconductor display device according to claim 3, wherein the protective circuit rectifies the waveform of a signal.

16. A semiconductor display device according to claim 3, wherein the protective circuit has a resistor.

17. A semiconductor display device according to claim 3, wherein the organic resin film comprises an acrylic film.

18. A semiconductor display device according to claim 3, wherein each of the first and second inorganic insulating films is selected from the group consisting of a silicon nitride film, a silicon oxynitride film, and an aluminum oxynitride film.

19. An electronic apparatus having the semiconductor display device according to claim 3, wherein the electronic apparatus is selected from the group consisting of a portable information terminal, an electronic book, a mobile computer, a video camera, a digital camera, a personal computer, a TV receiver, a cellular phone, and a projection display apparatus.

4. A semiconductor display device comprising:

a pixel portion and a protective circuit each comprising a TFT and a capacitor,

the TFT comprising;

an active layer, a gate insulating film in contact with the active layer, and a gate electrode in contact with the gate insulating film;

a first inorganic insulating film formed over the TFT;

an organic resin film formed in contact with the first inorganic insulating film;

a first opening and a second opening formed in the organic resin film;

a second inorganic insulating film formed over the organic resin film and being in contact with the first inorganic film in the first opening;

a contact hole formed through the gate insulating film and the first and second inorganic insulating films in the first opening so as to expose the active layer; and

a wiring formed on the second inorganic insulating film and connected to the active layer though the contact hole,

wherein edges of the first and second openings on a surface of the organic resin film have in section a parabolic shape whose principal axis is in a plane parallel to a substrate,

the capacitor comprising;

a first electrode comprising the same conductive material as the gate electrode; and

a second electrode comprising the same conductive material as the wiring,

wherein portions of the first and second inorganic insulating films overlap the first electrode and the second electrode in the second opening.

20. A semiconductor display device according to claim 4, wherein the protective circuit rectifies the waveform of a signal.

21. A semiconductor display device according to claim 4 wherein the protective circuit has a resistor.

22. A semiconductor display device according to claim 4, wherein the organic resin film comprises an acrylic film.

23. A semiconductor display device according to claim 4, wherein each of the first and second inorganic insulating films is selected from the group consisting of a silicon nitride film, a silicon oxynitride film, and an aluminum oxynitride film.

24. An electronic apparatus having the semiconductor display device according to claim 4, wherein the electronic apparatus is selected from the group consisting of a portable information terminal, an electronic book, a mobile computer, a video camera, a digital camera, a personal computer, a TV receiver, a cellular phone, and a projection display apparatus.