MEMS device and method of forming MEMS device
First Claim
1. A method of forming a micro-mirror device, the method comprising:
- providing a substructure including a base material and at least one conductive layer formed on a side of the base material;
forming a layer of dielectric material over the at least one conductive layer of the substructure;
depositing a conductive material on the layer of dielectric material, including communicating the conductive material with the at least one conductive layer of the substructure through the layer of dielectric material;
forming a sacrificial layer of silicon over the conductive material and the layer of dielectric material;
forming a reflective element over the sacrificial layer of silicon; and
substantially removing the sacrificial layer of silicon between the reflective element and the layer of dielectric material.
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Abstract
A method of forming a MEMS device includes providing a substructure including a base material and at least one conductive layer formed on a side of the base material, forming a dielectric layer over the at least one conductive layer of the substructure, defining an actuating area for the MEMS device on the dielectric layer, including depositing a conductive material on the dielectric layer and communicating the conductive material with the at least one conductive layer of the substructure through the dielectric layer, forming a sacrificial layer over the conductive material and the dielectric layer, including depositing silicon over the conductive material and the dielectric layer, and forming a substantially planar surface of the silicon, forming an actuating element over the sacrificial layer within the actuating area, including communicating the actuating element with the conductive material of the actuating area through the sacrificial layer, and substantially removing the sacrificial layer between the actuating element and the dielectric layer.
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Citations
31 Claims
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1. A method of forming a micro-mirror device, the method comprising:
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providing a substructure including a base material and at least one conductive layer formed on a side of the base material;
forming a layer of dielectric material over the at least one conductive layer of the substructure;
depositing a conductive material on the layer of dielectric material, including communicating the conductive material with the at least one conductive layer of the substructure through the layer of dielectric material;
forming a sacrificial layer of silicon over the conductive material and the layer of dielectric material;
forming a reflective element over the sacrificial layer of silicon; and
substantially removing the sacrificial layer of silicon between the reflective element and the layer of dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A micro-mirror device, comprising:
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a substructure including a base material and at least one conductive layer formed on a side of the base material;
a dielectric layer formed over the at least one conductive layer of the substructure;
at least one electrode formed on the dielectric layer; and
a reflective element extended over the dielectric layer and the at least one electrode, the reflective element including a hinge material and a reflective material formed on the hinge material, wherein the reflective element is adapted to move in response to application of an electrical signal to the at least one electrode. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A micro-mirror device, comprising:
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a substructure including a base material and at least one conductive layer formed on a side of the base material;
a dielectric layer formed over the at least one conductive layer of the substructure;
at least one electrode formed on the dielectric layer; and
a reflective element extended over the dielectric layer and the at least one electrode, including means formed in the reflective element for facilitating movement of the reflective element in response to application of an electrical signal to the at least one electrode. - View Dependent Claims (28, 29, 30, 31)
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Specification