Target comprising thickness profiling for an RF magnetron
First Claim
1. Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, with the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, the method comprising:
- the target thickness (Td) being profiled (15) differently thick over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.
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Accused Products
Abstract
Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, includes a target thickness (Td) profiled (15) differently over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions.
55 Citations
20 Claims
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1. Method for sputtering from a dielectric target (9) in a vacuum chamber (2) with a high frequency gas discharge, with the target (9) being mounted on a cooled metallic back plate (10) and this back plate forming an electrode (10) supplied with high frequency, the method comprising:
the target thickness (Td) being profiled (15) differently thick over the surface such that in the regions of a desired decrease of the sputtering rate the target thickness (Td) is selected to be greater than in the remaining regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- 10. Sputtering target of a dielectric material (9) bonded on a support (10) of metal, wherein the target (10) on a front side and/or on a back side has a profiled structure (15, 16) and between the dielectric target (9) and the profiled support, a compensation dielectric (17) is disposed.
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18. Sputtering target of dielectric material (9) bonded on a support (10) comprised of metal, comprising the target (9) on a front and/or back side, has a profile structure (15, 16), with the target comprising ZnS and SiO2 and that at 13.5 MHz the value of the loss angle δ
- satisfies the condition tan(δ
)<
0.05. - View Dependent Claims (19, 20)
- satisfies the condition tan(δ
Specification