Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate
First Claim
1. A method for growing a monocrystalline oxide layer on a monocrystalline substrate comprising:
- positioning a monocrystalline substrate having a surface within a reaction chamber;
removing any oxide that may be present on the surface of the substrate;
heating the substrate to a first temperature;
introducing oxygen to the reaction chamber to establish a first partial pressure of to oxygen in the reaction chamber, where the chosen combination of said first temperature and said first partial pressure is such that the substrate will not substantially react with the oxygen;
introducing at least one reactant to the reaction chamber and reacting the at least one reactant and the oxygen to form a first layer of oxide;
stopping the introduction of said at least one reactant to the reaction chamber;
reducing the partial pressure of oxygen in the reaction chamber to a second partial pressure of oxygen less than the first partial pressure of oxygen; and
heating the substrate to a second temperature greater than the first temperature, where the second temperature is high enough to improve the crystalline quality of the first layer, and the second temperature is not so high as to cause the substrate to react with the first layer.
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Abstract
High quality monocrystalline metal oxide layers are grown on a monocrystalline substrate such as a silicon wafer. The monocrystalline metal oxide is grown on the silicon substrate at a temperature low enough to prevent deleterious and simultaneous oxidation of the silicon substrate. After a layer of 1-3 monolayers of the monocrystalline oxide is grown, the growth is stopped and the crystal quality of that layer is improved by a higher temperature anneal. Following the anneal, the thickness of the layer can be increased by restarting the low temperature growth. An amorphous silicon oxide layer can be grown at the interface between the monocrystalline metal oxide layer and the silicon substrate after the thickness of the monocrystalline oxide reaches a few monolayers.
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Citations
25 Claims
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1. A method for growing a monocrystalline oxide layer on a monocrystalline substrate comprising:
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positioning a monocrystalline substrate having a surface within a reaction chamber;
removing any oxide that may be present on the surface of the substrate;
heating the substrate to a first temperature;
introducing oxygen to the reaction chamber to establish a first partial pressure of to oxygen in the reaction chamber, where the chosen combination of said first temperature and said first partial pressure is such that the substrate will not substantially react with the oxygen;
introducing at least one reactant to the reaction chamber and reacting the at least one reactant and the oxygen to form a first layer of oxide;
stopping the introduction of said at least one reactant to the reaction chamber;
reducing the partial pressure of oxygen in the reaction chamber to a second partial pressure of oxygen less than the first partial pressure of oxygen; and
heating the substrate to a second temperature greater than the first temperature, where the second temperature is high enough to improve the crystalline quality of the first layer, and the second temperature is not so high as to cause the substrate to react with the first layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method for fabricating a semiconductor structure comprising:
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positioning an oxidizable monocrystalline substrate having a surface within a reaction chamber;
removing any oxide that may be present on the surface of the substrate;
heating the substrate to a first temperature;
introducing oxygen to the reaction chamber to establish a partial pressure of oxygen in the reaction chamber;
introducing at least one reactant to the reaction chamber;
reacting the oxygen and the at least one reactant at the surface of the substrate to grow an oxide on the surface;
decreasing the partial pressure of oxygen in the reaction chamber;
terminating introducing a metal reactant; and
heating the substrate to a second temperature greater than the first temperature to improve the crystalline quality of the oxide;
wherein the first temperature is a temperature at which oxidation of the at least one reactant is kinetically favored in comparison to oxidation of the oxidizable substrate.
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23. A process for fabricating a semiconductor structure comprising:
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providing a monocrystalline silicon substrate; and
depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, comprising;
placing the substrate in a reactor chamber;
removing any oxide that may be present on the surface of the substrate;
heating the substrate to a temperature less than about 400°
C.;
introducing oxygen and a plurality of metal reactants to the reactor chamber to grow about 1-15 angstroms of a first layer of perovskite oxide on the substrate;
heating the substrate to a second temperature between about 600°
C. and about 750°
C. to improve the crystalline quality of the perovskite oxide. - View Dependent Claims (24, 25)
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Specification