Structure having laser ablated features and method of fabricating

• US 6,919,514 B2
• Filed: 09/15/2003
• Issued: 07/19/2005
• Est. Priority Date: 03/13/2001
• Status: Expired due to Term

• Current Assignee: Meta Platforms, Inc. (f/k/a Facebook, Inc.)
• Original Assignee: International Business Machines Corporation
• Inventors: Konrad, John Joseph, Wilson, James Warren, McKeveny, Jeffrey
• Primary Examiner(s): Gibson, Randy
• Assistant Examiner(s): PATEL, ISHWARBHAI B
• Application Number:
  US10/661,552
• Publication Number:
  US 20040064939A1
• Time in Patent Office: 673 Days
• Field of Search: 174/255, 174/256, 174/257, 174/258, 174/260, 174/261, 174/250, 174/117.F, 174/254, 174/117.FF, 361/792, 361/795, 298/52
• US Class Current: 174/258
• CPC Class Codes: H05K 2203/072 Electroless plating, e.g. finish plating or initial plating
• CPC Class Codes: H05K 2203/107 Using laser light shaping a substrate by laser ablation H05K3/0026
• CPC Class Codes: H05K 2203/1338 Chemical vapour deposition
• CPC Class Codes: H05K 3/0032 of organic insulating material
• CPC Class Codes: H05K 3/045 by making a conductive layer having a relief pattern, followed by abrading of the raised portions
• CPC Class Codes: H05K 3/107 by filling grooves in the support with conductive material H05K3/045, H05K3/101, H05K3/1258 and H05K3/465 take precedence
• CPC Class Codes: H05K 3/184 using masks
• CPC Class Codes: H05K 3/388 by the use of a metallic or inorganic thin film adhesion layer
• CPC Class Codes: H05K 3/465 by applying an insulating layer having channels for the next circuit layer
• CPC Class Codes: H05K 3/4661 Adding a circuit layer by direct wet plating, e.g. electroless plating; insulating materials adapted therefor other insulating materials H05K3/387
• CPC Class Codes: Y10T 29/49124 On flat or curved insulated base, e.g., printed circuit, etc.

Abstract

Embedded flush circuitry features are provided by providing a conductive seed layer on the sidewalls and bottom of laser ablated trench features plating a layer of conductive metal onto the seed layer and depositing a layer of dielectric material.

Claims

1. An electronic structure having embedded substantially flush circuit features comprising:

a first dielectric layer of polymeric material having a first top surface;

a second dielectric layer of polymeric material on said first top surface of said first dielectric layer of polymeric material, having a second top surface, said second layer of polymeric material also having trench features therein, having a bottom and sidewalls;

a conductive seed layer located on said bottom and sidewalls;

and electrically conductive material deposited in said trench features forming electrically conductive circuit lines being substantially flush with said second top surface of said second dielectric layer of polymeric material, wherein said polymeric material is at least one member selected from the group consisting of thermoplastic resin and thermosetting resin,

and further including a third dielectric layer of polymeric material located on said electrically conductive circuit lines, wherein the second dielectric layer of polymeric material is a different material than said first and third dielectric layer of polymeric material.

2. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said first dielectric layer comprises:

a reinforcing material selected from the group consisting of glass fibers and glass fabric.

3. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said circuit lines are up to about 20 microns thick.

4. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said conductive material comprises copper.

5. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said circuit lines are about 5 to about 20 microns thick.

6. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said circuit lines are about 5 to about 10 microns thick.

7. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said seed layer comprises copper or chromium.

8. The electronic structure having embedded substantially flush circuit features, according to claim 1, wherein said seed layer is about 100 angatroms to about 5000 angstroms thick.

9. The electronic structure of claim 1 wherein said electrically conductive material is plated metal.

10. The electronic structure of claim 1 wherein the circuit lines are about 0.5 to about 1 mil wide, about 0.5 to about 2 mils apart and up to about 20 microns thick.

11. An electronic structure which comprises at least two of the structures of claim 1 stacked together.

12. The electronic structure of claim 1 wherein said trench features are formed by laser oblation.