Side-emission type semiconductor light-emitting device and manufacturing method thereof

• US 6,919,586 B2
• Filed: 03/01/2004
• Issued: 07/19/2005
• Est. Priority Date: 04/24/2000
• Status: Expired due to Fees

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Fujii, Takehiro
• Primary Examiner(s): SMITH, BRADLEY
• Application Number:
  US10/792,200
• Publication Number:
  US 20040169187A1
• Time in Patent Office: 505 Days
• Field of Search: 257/81, 257/79, 257/99, 257/98, 257/100
• US Class Current: 257/100
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A side-emission type semiconductor light-emitting device 10 includes a substrate 12, and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18a and 18b onto which an LED chip 20 is bonded. A transparent or translucent resin 16 is charged between the substrate 12 and the case 14 whereby the LED chip 20 is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device 10 includes surfaces 16a, 16b and a surface opposite to the surface 16b which are formed of the transparent or translucent resin 16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case 14 is scattered by the light-emitting surface.

Claims

1. A side-emission type semiconductor light-emitting device, comprising:

a substrate formed with an electrode;

an LED chip bonded onto said substrate;

a transparent or translucent resin with which said LED chip is molded; and

a reflector which reflects a light emitted from said LED chip, wherein

said transparent or translucent resin has a convex portion, and said reflector has a throughole to be fitted into said convex portion.

4. A side-emission type semiconductor light-emitting device according to claim 1, wherein said LED chip has a bonding wire extending from a top surface, and said throughole is formed directly above said LED chip.

2. A side-emission type semiconductor light-emitting device comprising:

a substrate formed with an electrode;

an LED chip bonded onto said substrate;

a transparent or translucent resin with which said LED chin is molded; and

a reflector which reflects a light emitted from said LED chip, wherein

said transparent or translucent resin has a convex portion, and said reflector has a concave portion to be fitted into said convex portion, and wherein

said concave portion is a throughole having a diameter which becomes larger from one main surface to other main surface of said reflector.

3. A side-emission type semiconductor light-emitting device according to claim 2, wherein said one main surface is a surface brought into contact with said transparent or translucent resin, and said other main surface is a surface exposed to outside.

5. A side-emission type semiconductor light-emitting device according to claim 2, wherein said LED chip has a bonding wire extending from a top surface, and said concave portion is formed directly above said LED chip.

6. A side-emission type semiconductor light-emitting device according to claim 3, wherein said LED chip has a bonding wire extending from a top surface, and said concave portion is formed directly above said LED chip.