Method of film deposition using single-wafer-processing type CVD

• US 6,921,556 B2
• Filed: 03/28/2003
• Issued: 07/26/2005
• Est. Priority Date: 04/12/2002
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Sato, Kazuo, Shimizu, Akira, Fukuda, Hideaki, Kawano, Baiei
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US10/403,179
• Publication Number:
  US 20040071874A1
• Time in Patent Office: 851 Days
• Field of Search: 427/248.1, 427/255.11
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/4409 characterised by sealing means
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45521 the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: C23C 16/4585 Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating

Abstract

A method of film deposition using a single-wafer-processing type CVD apparatus includes: (a) sealing a periphery of a susceptor to separate a reaction chamber from a wafer-handling chamber when the susceptor rises; and (b) flowing a gas from the wafer-handling chamber into the reaction chamber through at least one discharge hole formed through the susceptor via a back side and a periphery of a wafer placed on the susceptor during film deposition.

Claims

1. A method of film deposition comprising the steps of:

placing a wafer on a susceptor positioned inside a wafer-handling chamber disposed under a reaction chamber included in a single-wafer-processing type CVD apparatus;

positioning the wafer inside the reaction chamber by raising the susceptor;

when the susceptor moves to the position, separating the reaction chamber and the wafer-handling chamber by making closely in contact a periphery of the susceptor and a circular separation plate disposed coaxially with the susceptor and between the reaction chamber and the wafer-handling chamber;

emitting a jet of reaction gas from a showerhead disposed inside the reaction chamber onto the wafer to be processed;

depositing a film on the wafer;

during the deposition, discharging an inert gas from the wafer-handling chamber to the reaction chamber through at least one gas discharge hole formed through the susceptor from its bottom to its top, and via a back side of the wafer placed on the susceptor and a periphery of the wafer;

evacuating the reaction chamber through an exhaust duct, which is positioned in the vicinity of the showerhead and is provided circularly along an inner wall of the reaction chamber; and

after the deposition, lowering the susceptor and moving the wafer to the wafer-handling chamber.

2. The method as claimed in claim 1, further comprising covering a non-deposition area of a periphery of the wafer by a circular guard ring during the deposition.

3. The method as claimed in claim 2, wherein the circular guard ring is provided at an inner circumference portion of the separation plate, and the inert gas is discharged into the reaction chamber via the back side of the wafer, the wafer periphery, and a clearance formed between the circular guard ring and the wafer.

4. The method as claimed in claim 1, wherein the susceptor comprises multiple wafer lift pins which are used as said at least one gas discharge hole.

5. The method as claimed in claim 2, wherein the inner circumference portion of the guard ring contacts the wafer periphery when the reaction chamber and the wafer-handling chamber are separated after the susceptor goes up and the wafer is positioned inside the reaction chamber.

6. The method as claimed in claim 1, wherein the evacuation of the reaction chamber is performed through a clearance formed between the circular exhaust duct and the separation plate.

7. The method as claimed in claim 6, wherein said clearance is adjustable within the range of 0.1 mm to 5 mm by changing a thickness of the separation plate.

8. The method as claimed in claim 1, wherein the deposition is performed at a temperature in the range of 50°

C. to 400°

C.

9. The method as claimed in claim 1, wherein a pressure during the deposition is determined by calculating a pressure inside the circular exhaust duct by using as parameters a clearance between the separation plate and the susceptor and a flow rate of the reaction gas.

10. A method of film deposition comprising the steps of:

placing a wafer on a susceptor positioned inside a wafer-handling chamber disposed under a reaction chamber included in a single-wafer-processing type CVD apparatus;

positioning the wafer inside the reaction chamber by raising the susceptor;

when the susceptor moves to the position, separating the reaction chamber and the wafer-handling chamber by making closely in contact a periphery of the susceptor and a circular separation plate disposed coaxially with the susceptor and between the reaction chamber and the wafer-handling chamber;

emitting a jet of reaction gas from a showerhead disposed inside the reaction chamber onto the wafer to be processed;

depositing a film on the wafer;

during the deposition, discharging an inert gas from the wafer-handling chamber to the reaction chamber through at least one gas discharge hole formed through the susceptor from its bottom to its top, and via a periphery of the wafer placed on the susceptor and a inner periphery of the circular separation plate;

evacuating the reaction chamber through an exhaust duct, which is positioned in the vicinity of the showerhead and is provided circularly along an inner wall of the reaction chamber; and

after the deposition, lowering the susceptor and moving the wafer to the wafer-handling chamber.

11. The method as claimed in claim 10, further comprising covering a non-deposition area around the wafer periphery by a circular guard ring during the deposition, wherein the circular guard ring is provided at an inner circumference portion of the separation plate and the inert gas is discharged into the reaction chamber through the wafer periphery and a clearance formed between the circular guard ring and the wafer.