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Method of film deposition using single-wafer-processing type CVD

  • US 6,921,556 B2
  • Filed: 03/28/2003
  • Issued: 07/26/2005
  • Est. Priority Date: 04/12/2002
  • Status: Active Grant
First Claim
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1. A method of film deposition comprising the steps of:

  • placing a wafer on a susceptor positioned inside a wafer-handling chamber disposed under a reaction chamber included in a single-wafer-processing type CVD apparatus;

    positioning the wafer inside the reaction chamber by raising the susceptor;

    when the susceptor moves to the position, separating the reaction chamber and the wafer-handling chamber by making closely in contact a periphery of the susceptor and a circular separation plate disposed coaxially with the susceptor and between the reaction chamber and the wafer-handling chamber;

    emitting a jet of reaction gas from a showerhead disposed inside the reaction chamber onto the wafer to be processed;

    depositing a film on the wafer;

    during the deposition, discharging an inert gas from the wafer-handling chamber to the reaction chamber through at least one gas discharge hole formed through the susceptor from its bottom to its top, and via a back side of the wafer placed on the susceptor and a periphery of the wafer;

    evacuating the reaction chamber through an exhaust duct, which is positioned in the vicinity of the showerhead and is provided circularly along an inner wall of the reaction chamber; and

    after the deposition, lowering the susceptor and moving the wafer to the wafer-handling chamber.

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