Thin film transistor substrate and fabricating method thereof
First Claim
Patent Images
1. A thin film transistor substrate for a liquid crystal display, comprising:
- a data line extending in a first straight line direction;
a gate line extending in a second straight line direction;
a source electrode connected to the data line so as to receive video data;
a drain electrode opposed to the source electrode;
a channel between the drain electrode and the source electrode, wherein the channel has a desired size; and
a gate electrode having overlapping areas between the gate electrode and the source/drain electrodes and extending from the gate line for opening and closing the channel, wherein the gate electrode includes a head portion, the head portion having an inclined part sloped at a first angle relative to the first straight line direction of the data line and a second angle relative to the second straight line direction of the gate line, the inclined part being unparallel to the gate line, the first angle different from the second angle.
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Abstract
A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.
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Citations
21 Claims
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1. A thin film transistor substrate for a liquid crystal display, comprising:
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a data line extending in a first straight line direction;
a gate line extending in a second straight line direction;
a source electrode connected to the data line so as to receive video data;
a drain electrode opposed to the source electrode;
a channel between the drain electrode and the source electrode, wherein the channel has a desired size; and
a gate electrode having overlapping areas between the gate electrode and the source/drain electrodes and extending from the gate line for opening and closing the channel, wherein the gate electrode includes a head portion, the head portion having an inclined part sloped at a first angle relative to the first straight line direction of the data line and a second angle relative to the second straight line direction of the gate line, the inclined part being unparallel to the gate line, the first angle different from the second angle. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A thin film transistor substrate for a liquid crystal display, comprising:
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a data line extending in a first straight line direction, the data line receiving video data;
a gate line extending in a second straight line direction, the gate line being perpendicular to the data line;
a source electrode extending from the data line in a same direction as the gate line;
a drain electrode opposite the source electrode;
a semiconductor layer having a channel, the channel being located between the drain electrode and the source electrode; and
a gate electrode extending from the gate line and in a same direction as the data line, a portion of the source electrode overlapping the gate electrode and a portion of the drain electrode overlapping the gate electrode, and wherein a first overlapping portion between the source electrode and the gate electrode has a first width and a second overlapping portion between the drain electrode and the gate electrode has a second width, the first width being larger than the second width, the first width of the source electrode and the second width of the drain electrode corresponding to a shape of the semiconductor layer;
whereby the shape of the gate electrode reduces the overlapping areas between the gate electrode and the source and drain electrodes to reduce a parasitic capacitance. - View Dependent Claims (13, 14, 15, 16)
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17. A thin film transistor substrate for a liquid crystal display, comprising:
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a data line extending in a first straight line direction;
a gate line extending in a second straight line direction;
a source electrode connected to the data line so as to receive video data;
a drain electrode opposed to the source electrode;
a channel between the drain electrode and the source electrode, wherein the channel has a desired size; and
a gate electrode having overlapping areas between the gate electrode and the source/drain electrodes and extending from the gate line for opening and closing the channel, wherein the gate electrode includes a head portion, the head portion having an inclined part sloped at a first angle relative to the first straight line direction of the data line and a second angle relative to the second straight line direction of the gate line, the inclined part being unparallel to the gate line, a semiconductor layer comprising the channel and located above the gate electrode, wherein said semiconductor layer has a shape of a funnel having a first portion and a second portion in a plan view, said second portion displaced from said first portion along the length direction of the funnel, the first overlapping area between the source electrode and the gate electrode corresponding to the first portion of the funnel and the second overlapping area between the drain electrode and the gate electrode corresponding to the second portion of the funnel. - View Dependent Claims (18)
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19. A thin film transistor substrate for a liquid crystal display, comprising:
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a data line extending in a first straight line direction;
a gate line extending in a second straight line direction;
a source electrode connected to the data line so as to receive video data;
a drain electrode opposed to the source electrode;
a channel between the drain electrode and the source electrode, wherein the channel has a desired size; and
a gate electrode having overlapping areas between the gate electrode and the source/drain electrodes and extending from the gate line for opening and closing the channel, wherein the gate electrode includes a head portion, the head portion having an inclined part sloped at a first angle relative to the first straight line direction of the data line and a second angle relative to the second straight line direction of the gate line, the inclined part being unparallel to the gate line, wherein the channel is part of a semiconductor layer having a shape of a funnel having a first portion and a second portion in a plan view, an overlapping area between the source electrode and the gate electrode corresponding to the first portion of the funnel and an overlapping area between the drain electrode and the gate electrode corresponding to the second portion of the funnel. - View Dependent Claims (20)
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21. A thin film transistor substrate for a liquid crystal display, comprising:
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a data line and a gate line defining a pixel area;
a source electrode extending from the data line;
a drain electrode opposite the source electrode;
a semiconductor layer having a channel, the channel being located between the drain electrode and the source electrode; and
a gate electrode extending from the gate line and overlapping the source/drain electrodes, wherein a first overlapping portion between the source electrode and the gate electrode has a first width and a second overlapping portion between the drain electrode and the gate electrode has a second width, the first width being larger than the second width, whereby the shape of the gate electrode reduces the overlapping areas between the gate electrode and the source and drain electrodes to reduce a parasitic capacitance.
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Specification