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Method and apparatus for leveling thermal stress variations in multi-layer MEMS devices

  • US 6,922,272 B1
  • Filed: 02/14/2003
  • Issued: 07/26/2005
  • Est. Priority Date: 02/14/2003
  • Status: Active Grant
First Claim
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1. A method of operational athermalization of a MEMS device over a temperature range, the MEMS device comprising a first member coupled to a second member, the first member having a first aggregate thermal coefficient of expansion represented by a first value and a second member having a second aggregate thermal coefficient of expansion represented by a second value, the method comprising a step of reducing a difference between the first value and the second value,wherein the step of reducing a difference between the first value and the second value comprises a step of altering the first value to a third value, wherein the step of altering the first thermal coefficient of expansion from the first value to the third value comprises a step of adding an athermalization layer to the first member during a fabrication process, wherein the athermalization layer comprises a thermal coefficient of expansion represented by a fourth value distinct from the first value, and wherein the athermalization layer comprises a plasma enhanced chemical vapor deposit silicon nitride.

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