Vertical cavity surface emitting laser including indium in the active region
First Claim
1. A vertical cavity surface emitting laser, comprising:
- an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including GaAsN barrier layers sandwiching said at least one quantum well; and
GaAsN confinement layers sandwiching said active region.
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Abstract
Quantum wells and associated barriers layers can be grown to include nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the 1260 to 1650 nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser is described that includes at least one quantum well comprised of InGaAs; GaAsN barrier layers sandwiching said at least one quantum well; and GaAsN confinement layers sandwiching said barrier layers. GaAsN barrier layers sandwiching the quantum well and AlGaAs confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. AlGaAs barrier layers sandwiching the at least one quantum well and GaAsN confinement layers sandwiching the barrier layers can also be provided with a InGaAs quantum well. Quantum wells can be developed up to and including 50 Å in thickness. Quantum wells can also be developed with a depth of at least 40 meV.
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Citations
5 Claims
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1. A vertical cavity surface emitting laser, comprising:
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an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including GaAsN barrier layers sandwiching said at least one quantum well; and
GaAsN confinement layers sandwiching said active region. - View Dependent Claims (2)
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3. A vertical cavity surface emitting laser, comprising:
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an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including GaAsN barrier layers sandwiching said at least one quantum well; and
AIGaAs confinement layers sandwiching said active region. - View Dependent Claims (4)
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5. A vertical cavity surface emitting laser, comprising:
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an active region further comprising at least one quantum well having a depth of at least 40 meV, wherein said depth is defined using the difference between a valence band offset and a conduction band offset, said quantum well being comprised of InGaAs and further including AIGaAs barrier layers sandwiching said at least one quantum well; and
GaAsN confinement layers sandwiching said active region. 6.The vertical cavity surface emitting laser of claim 5 wherein said at least one quantum well is up to and including 50 Å
in thickness.
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Specification