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Semiconductor substrate made of group III nitride, and process for manufacture thereof

  • US 6,924,159 B2
  • Filed: 03/26/2002
  • Issued: 08/02/2005
  • Est. Priority Date: 03/27/2001
  • Status: Expired due to Term
First Claim
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1. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:

  • forming a metal film on a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride, heat-treating said basal substrate in an atmosphere containing hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of the group III nitride, and forming a second semiconductor layer of a group III nitride on said metal film.

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