Semiconductor substrate made of group III nitride, and process for manufacture thereof
First Claim
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1. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:
- forming a metal film on a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride, heat-treating said basal substrate in an atmosphere containing hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of the group III nitride, and forming a second semiconductor layer of a group III nitride on said metal film.
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Abstract
To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of:
- forming a GaN layer 2 on a sapphire substrate 1 of the C face ((0001) face); forming a titanium film 3 thereon; heat-treating the substrate in an atmosphere containing hydrogen gas or a gas of a compound containing hydrogen to form voids in the GaN layer 2; and thereafter forming a GaN layer 4 on the GaN layer 2′.
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Citations
37 Claims
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1. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:
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forming a metal film on a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride, heat-treating said basal substrate in an atmosphere containing hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of the group III nitride, and forming a second semiconductor layer of a group III nitride on said metal film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:
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forming a metal film on a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride, heat-treating said basal substrate in an atmosphere containing nitrogen gas, oxygen gas or a mixture of nitrogen gas and oxygen gas to form voids in said first semiconductor layer of the group III nitride, and forming a second semiconductor layer of a group III nitride on said metal film.
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34. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:
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forming a metal film on a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride, heat-treating said basal substrate in an atmosphere containing nitrogen gas or nitrogen-containing compound gas to convert the surface of said metal film into the nitride thereof, heat-treating said basal substrate in an atmosphere containing hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of the group III nitride, and forming a second semiconductor layer of a group III nitride on said metal film.
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35. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:
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forming a metal film on a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride, heat-treating said basal substrate in an atmosphere containing nitrogen gas or nitrogen-containing compound gas and also hydrogen gas or hydrogen-containing compound gas to form voids in said first semiconductor layer of a group III nitride and also to convert the surface of said metal film into the nitride thereof simultaneously, and forming a second semiconductor layer of a group III nitride on said metal film.
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36. A process for manufacturing a semiconductor substrate made of a group III nitride comprising the steps of:
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heat-treating a basal substrate having a first semiconductor layer of a group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a group III nitride to form voids in said first semiconductor layer of the group III nitride, and forming a second semiconductor layer of a group III nitride on said first semiconductor layer of the group III nitride, wherein said step of heat-treatment is carried out under the controlled condition of temperature and atmosphere where the crystal structure of the group III nitride used for the first semiconductor is decomposed, and at least nitrogen derived from the group III nitride vaporize, resulting in the percentage of the voids formed in the first semiconductor layer being no less than 20% but no more than 90% by volume.
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37. A process for manufacturing a semiconductor substrate made of a Group III nitride comprising the steps of:
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forming a metal film on a basal substrate having a first semiconductor layer of a Group III nitride formed on a base material or a basal substrate comprising a first semiconductor layer of a Group III nitride;
heat-treating said basal substrate covered with the metal film to form voids in said first semiconductor layer of the Group III nitride; and
forming a second semiconductor layer of a Group III nitride on said first semiconductor layer of the Group III nitride containing the voids formed in advance.
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Specification