Method for fabricating a gate structure of a field effect transistor
First Claim
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1. A method of defining a feature on a substrate, comprising:
- (a) providing a substrate having a material layer formed thereon;
(b) forming a first mask comprising amorphous carbon on the material layer;
(c) forming a second mask conformably on one or more sidewalls of the first mask to a thickness defining a smallest width of the feature;
(d) removing the first mask using a plasma comprising at least one of hydrogen bromide (HBr) and oxygen (O2); and
(e) plasma etching the material layer using the second mask as an etch mask to define at least one feature therein.
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Abstract
A method for fabricating features on a substrate having reduced dimensions. The features are formed by defining a first mask on regions of the substrate. The first mask is defined using lithographic techniques. A second mask is then conformably formed on one or more sidewalls of the first mask. The features are formed on the substrate by removing the first mask and then etching the substrate using the second mask as an etch mask.
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Citations
20 Claims
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1. A method of defining a feature on a substrate, comprising:
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(a) providing a substrate having a material layer formed thereon;
(b) forming a first mask comprising amorphous carbon on the material layer;
(c) forming a second mask conformably on one or more sidewalls of the first mask to a thickness defining a smallest width of the feature;
(d) removing the first mask using a plasma comprising at least one of hydrogen bromide (HBr) and oxygen (O2); and
(e) plasma etching the material layer using the second mask as an etch mask to define at least one feature therein. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a gate structure of a field effect transistor comprising:
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(a) providing a substrate having a gate electrode layer formed on a gate dielectric layer;
(b) forming a first mask comprising amorphous carbon on regions of the gate layer above source, drain, and channel regions of the transistor;
(c) forming a second mask conformably on one or more sidewalls of the first mask to a thickness defining a length of the channel region;
(d) removing the first mask using a plasma comprising at least one of hydrogen bromide (HBr) and oxygen (O2); and
(e) completing the gate structure by plasma etching the gate electrode layer and the gate dielectric layer using the second mask as an etch mask. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of fabricating a field effect transistor on a substrate comprising:
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(a) providing a substrate having a gate electrode layer formed an a gate dielectric layer;
(b) forming a first mask comprising amorphous carbon on regions of the gate electrode layer above source drain, and channel regions of the transistor;
(c) forming a second mask conformably on one or more sidewalls of the first mask to a thickness defining a length of the channel region;
(d) removing the first mask using a plasma comprising at least one of hydrogen bromide (HBr) and oxygen (O2); and
(e) completing the gate structure by plasma etching the gate electrode layer and the gate dielectric layer using the second mask as an etch mask. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification